Cita APA (7a ed.)

Lei, J., Wang, R., Yang, G., Wang, J., Chen, D., Lu, H., . . . Zheng, Y. (2019). Investigation on the Activation Energy of Device Degradation and Switching Time in AlGaN/GaN HEMTs for High-Frequency Application. IEEE.

Cita Chicago Style (17a ed.)

Lei, Jianming, Rui Wang, Guo Yang, Jin Wang, Dunjun Chen, Hai Lu, Rong Zhang, y Youdou Zheng. Investigation on the Activation Energy of Device Degradation and Switching Time in AlGaN/GaN HEMTs for High-Frequency Application. IEEE, 2019.

Cita MLA (8a ed.)

Lei, Jianming, et al. Investigation on the Activation Energy of Device Degradation and Switching Time in AlGaN/GaN HEMTs for High-Frequency Application. IEEE, 2019.