APA (7th ed.) Citation

Lei, J., Wang, R., Yang, G., Wang, J., Chen, D., Lu, H., . . . Zheng, Y. (2019). Investigation on the Activation Energy of Device Degradation and Switching Time in AlGaN/GaN HEMTs for High-Frequency Application. IEEE.

Chicago Style (17th ed.) Citation

Lei, Jianming, Rui Wang, Guo Yang, Jin Wang, Dunjun Chen, Hai Lu, Rong Zhang, and Youdou Zheng. Investigation on the Activation Energy of Device Degradation and Switching Time in AlGaN/GaN HEMTs for High-Frequency Application. IEEE, 2019.

MLA (8th ed.) Citation

Lei, Jianming, et al. Investigation on the Activation Energy of Device Degradation and Switching Time in AlGaN/GaN HEMTs for High-Frequency Application. IEEE, 2019.