Style de citation APA (7e éd.)

Lei, J., Wang, R., Yang, G., Wang, J., Chen, D., Lu, H., . . . Zheng, Y. (2019). Investigation on the Activation Energy of Device Degradation and Switching Time in AlGaN/GaN HEMTs for High-Frequency Application. IEEE.

Style de citation Chicago (17e éd.)

Lei, Jianming, Rui Wang, Guo Yang, Jin Wang, Dunjun Chen, Hai Lu, Rong Zhang, et Youdou Zheng. Investigation on the Activation Energy of Device Degradation and Switching Time in AlGaN/GaN HEMTs for High-Frequency Application. IEEE, 2019.

Style de citation MLA (8e éd.)

Lei, Jianming, et al. Investigation on the Activation Energy of Device Degradation and Switching Time in AlGaN/GaN HEMTs for High-Frequency Application. IEEE, 2019.