Investigation on the Activation Energy of Device Degradation and Switching Time in AlGaN/GaN HEMTs for High-Frequency Application

In this paper, the influence of traps on the dynamic on-resistance (<inline-formula> <tex-math notation="LaTeX">$\text{R}_{\mathrm{ dson}}$ </tex-math></inline-formula>) and switching time of AlGaN/GaN high-electron-mobility transistors is validated by means of a sw...

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Autores principales:	Jianming Lei, Rui Wang, Guo Yang, Jin Wang, Dunjun Chen, Hai Lu, Rong Zhang, Youdou Zheng
Formato:	article
Lenguaje:	EN
Publicado:	IEEE 2019
Materias:	AlGaN/GaN HEMT activation energy dynamic on-resistance switching time Electrical engineering. Electronics. Nuclear engineering TK1-9971
Acceso en línea:	https://doaj.org/article/4d70049b4fca48acb4b6843b84d54b15
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spelling	oai:doaj.org-article:4d70049b4fca48acb4b6843b84d54b152021-11-19T00:01:02ZInvestigation on the Activation Energy of Device Degradation and Switching Time in AlGaN/GaN HEMTs for High-Frequency Application2168-673410.1109/JEDS.2019.2906353https://doaj.org/article/4d70049b4fca48acb4b6843b84d54b152019-01-01T00:00:00Zhttps://ieeexplore.ieee.org/document/8671692/https://doaj.org/toc/2168-6734In this paper, the influence of traps on the dynamic on-resistance (<inline-formula> <tex-math notation="LaTeX">$\text{R}_{\mathrm{ dson}}$ </tex-math></inline-formula>) and switching time of AlGaN/GaN high-electron-mobility transistors is validated by means of a switching power converter with floating buck-boost topology. A new scheme based on the voltage-dependent dynamic <inline-formula> <tex-math notation="LaTeX">$\text{R}_{\mathrm{ dson}}$ </tex-math></inline-formula> is proposed to extract the average activation energy of device degradation. The average activation energy obtained is 2.25 eV at 50–200 V and 2.60 eV at 200–600 V. In addition, the dynamic <inline-formula> <tex-math notation="LaTeX">$\text{R}_{\mathrm{ dson}}$ </tex-math></inline-formula> is accurately extracted by a unique extraction circuit with high switching frequency up to 1 MHz and high off-state voltage up to 600 V. Meanwhile, the switching times at turn-on and turn-off transitions are captured in a floating buck-boost converter, showing that the transconductance decreases with increasing drain voltage. Furthermore, the effect of parasitic output capacitor on the dynamic <inline-formula> <tex-math notation="LaTeX">$\text{R}_{\mathrm{ dson}}$ </tex-math></inline-formula> is investigated by an experimental method. Finally, a proper hard operating mode is proposed to alleviate the influence of the trapping effect on the performance of switching power converters.Jianming LeiRui WangGuo YangJin WangDunjun ChenHai LuRong ZhangYoudou ZhengIEEEarticleAlGaN/GaN HEMTactivation energydynamic on-resistanceswitching timeElectrical engineering. Electronics. Nuclear engineeringTK1-9971ENIEEE Journal of the Electron Devices Society, Vol 7, Pp 417-424 (2019)
institution	DOAJ
collection	DOAJ
language	EN
topic	AlGaN/GaN HEMT activation energy dynamic on-resistance switching time Electrical engineering. Electronics. Nuclear engineering TK1-9971
spellingShingle	AlGaN/GaN HEMT activation energy dynamic on-resistance switching time Electrical engineering. Electronics. Nuclear engineering TK1-9971 Jianming Lei Rui Wang Guo Yang Jin Wang Dunjun Chen Hai Lu Rong Zhang Youdou Zheng Investigation on the Activation Energy of Device Degradation and Switching Time in AlGaN/GaN HEMTs for High-Frequency Application
description	In this paper, the influence of traps on the dynamic on-resistance (<inline-formula> <tex-math notation="LaTeX">$\text{R}_{\mathrm{ dson}}$ </tex-math></inline-formula>) and switching time of AlGaN/GaN high-electron-mobility transistors is validated by means of a switching power converter with floating buck-boost topology. A new scheme based on the voltage-dependent dynamic <inline-formula> <tex-math notation="LaTeX">$\text{R}_{\mathrm{ dson}}$ </tex-math></inline-formula> is proposed to extract the average activation energy of device degradation. The average activation energy obtained is 2.25 eV at 50–200 V and 2.60 eV at 200–600 V. In addition, the dynamic <inline-formula> <tex-math notation="LaTeX">$\text{R}_{\mathrm{ dson}}$ </tex-math></inline-formula> is accurately extracted by a unique extraction circuit with high switching frequency up to 1 MHz and high off-state voltage up to 600 V. Meanwhile, the switching times at turn-on and turn-off transitions are captured in a floating buck-boost converter, showing that the transconductance decreases with increasing drain voltage. Furthermore, the effect of parasitic output capacitor on the dynamic <inline-formula> <tex-math notation="LaTeX">$\text{R}_{\mathrm{ dson}}$ </tex-math></inline-formula> is investigated by an experimental method. Finally, a proper hard operating mode is proposed to alleviate the influence of the trapping effect on the performance of switching power converters.
format	article
author	Jianming Lei Rui Wang Guo Yang Jin Wang Dunjun Chen Hai Lu Rong Zhang Youdou Zheng
author_facet	Jianming Lei Rui Wang Guo Yang Jin Wang Dunjun Chen Hai Lu Rong Zhang Youdou Zheng
author_sort	Jianming Lei
title	Investigation on the Activation Energy of Device Degradation and Switching Time in AlGaN/GaN HEMTs for High-Frequency Application
title_short	Investigation on the Activation Energy of Device Degradation and Switching Time in AlGaN/GaN HEMTs for High-Frequency Application
title_full	Investigation on the Activation Energy of Device Degradation and Switching Time in AlGaN/GaN HEMTs for High-Frequency Application
title_fullStr	Investigation on the Activation Energy of Device Degradation and Switching Time in AlGaN/GaN HEMTs for High-Frequency Application
title_full_unstemmed	Investigation on the Activation Energy of Device Degradation and Switching Time in AlGaN/GaN HEMTs for High-Frequency Application
title_sort	investigation on the activation energy of device degradation and switching time in algan/gan hemts for high-frequency application
publisher	IEEE
publishDate	2019
url	https://doaj.org/article/4d70049b4fca48acb4b6843b84d54b15
work_keys_str_mv	AT jianminglei investigationontheactivationenergyofdevicedegradationandswitchingtimeinalganganhemtsforhighfrequencyapplication AT ruiwang investigationontheactivationenergyofdevicedegradationandswitchingtimeinalganganhemtsforhighfrequencyapplication AT guoyang investigationontheactivationenergyofdevicedegradationandswitchingtimeinalganganhemtsforhighfrequencyapplication AT jinwang investigationontheactivationenergyofdevicedegradationandswitchingtimeinalganganhemtsforhighfrequencyapplication AT dunjunchen investigationontheactivationenergyofdevicedegradationandswitchingtimeinalganganhemtsforhighfrequencyapplication AT hailu investigationontheactivationenergyofdevicedegradationandswitchingtimeinalganganhemtsforhighfrequencyapplication AT rongzhang investigationontheactivationenergyofdevicedegradationandswitchingtimeinalganganhemtsforhighfrequencyapplication AT youdouzheng investigationontheactivationenergyofdevicedegradationandswitchingtimeinalganganhemtsforhighfrequencyapplication
_version_	1718420667230060544

Investigation on the Activation Energy of Device Degradation and Switching Time in AlGaN/GaN HEMTs for High-Frequency Application

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