Investigation on the Activation Energy of Device Degradation and Switching Time in AlGaN/GaN HEMTs for High-Frequency Application
In this paper, the influence of traps on the dynamic on-resistance (<inline-formula> <tex-math notation="LaTeX">$\text{R}_{\mathrm{ dson}}$ </tex-math></inline-formula>) and switching time of AlGaN/GaN high-electron-mobility transistors is validated by means of a sw...
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| Main Authors: | , , , , , , , |
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| Format: | article |
| Language: | EN |
| Published: |
IEEE
2019
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| Subjects: | |
| Online Access: | https://doaj.org/article/4d70049b4fca48acb4b6843b84d54b15 |
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