Giant persistent photoconductivity in monolayer MoS2 field-effect transistors

Giant persistent photoconductivity in monolayer MoS2 field-effect transistors

Abstract Monolayer transition metal dichalcogenides (TMD) have numerous potential applications in ultrathin electronics and photonics. The exposure of TMD-based devices to light generates photo-carriers resulting in an enhanced conductivity, which can be effectively used, e.g., in photodetectors. If...

Descripción completa

Guardado en:
Detalles Bibliográficos
Autores principales: A. George, M. V. Fistul, M. Gruenewald, D. Kaiser, T. Lehnert, R. Mupparapu, C. Neumann, U. Hübner, M. Schaal, N. Masurkar, L. M. R. Arava, I. Staude, U. Kaiser, T. Fritz, A. Turchanin
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2021
Materias:
Materials of engineering and construction. Mechanics of materials
TA401-492
Chemistry
QD1-999
Acceso en línea:https://doaj.org/article/4ea6875eed2f449a9ee535e70f143782
Etiquetas: Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!

Internet

https://doaj.org/article/4ea6875eed2f449a9ee535e70f143782

Ejemplares similares