Nanoindentation response of semiconductors

The paper reviews the nanoindentation behaviour of semiconductors under concentrated load. We consider first, fundamental aspects regarding the mechanical resistance to contact loading of semiconductor single crystals (indentation strain, hardness-yield stress relationship). Then, the paper summa...

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Autores principales: LeBourhis, E., Patriarche, G.
Formato: article
Lenguaje:EN
Publicado: D.Ghitu Institute of Electronic Engineering and Nanotechnologies 2008
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Acceso en línea:https://doaj.org/article/4f29f9cd3f8b46c4ab59cdf013c48eca
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spelling oai:doaj.org-article:4f29f9cd3f8b46c4ab59cdf013c48eca2021-11-21T12:06:16ZNanoindentation response of semiconductors2537-63651810-648Xhttps://doaj.org/article/4f29f9cd3f8b46c4ab59cdf013c48eca2008-10-01T00:00:00Zhttps://mjps.nanotech.md/archive/2008/article/3945https://doaj.org/toc/1810-648Xhttps://doaj.org/toc/2537-6365The paper reviews the nanoindentation behaviour of semiconductors under concentrated load. We consider first, fundamental aspects regarding the mechanical resistance to contact loading of semiconductor single crystals (indentation strain, hardness-yield stress relationship). Then, the paper summarizes recent studies regarding nanoindentation structure and geometrical size effect. LeBourhis, E.Patriarche, G.D.Ghitu Institute of Electronic Engineering and NanotechnologiesarticlePhysicsQC1-999ElectronicsTK7800-8360ENMoldavian Journal of the Physical Sciences, Vol 7, Iss 4, Pp 456-465 (2008)
institution DOAJ
collection DOAJ
language EN
topic Physics
QC1-999
Electronics
TK7800-8360
spellingShingle Physics
QC1-999
Electronics
TK7800-8360
LeBourhis, E.
Patriarche, G.
Nanoindentation response of semiconductors
description The paper reviews the nanoindentation behaviour of semiconductors under concentrated load. We consider first, fundamental aspects regarding the mechanical resistance to contact loading of semiconductor single crystals (indentation strain, hardness-yield stress relationship). Then, the paper summarizes recent studies regarding nanoindentation structure and geometrical size effect.
format article
author LeBourhis, E.
Patriarche, G.
author_facet LeBourhis, E.
Patriarche, G.
author_sort LeBourhis, E.
title Nanoindentation response of semiconductors
title_short Nanoindentation response of semiconductors
title_full Nanoindentation response of semiconductors
title_fullStr Nanoindentation response of semiconductors
title_full_unstemmed Nanoindentation response of semiconductors
title_sort nanoindentation response of semiconductors
publisher D.Ghitu Institute of Electronic Engineering and Nanotechnologies
publishDate 2008
url https://doaj.org/article/4f29f9cd3f8b46c4ab59cdf013c48eca
work_keys_str_mv AT lebourhise nanoindentationresponseofsemiconductors
AT patriarcheg nanoindentationresponseofsemiconductors
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