Indirect to direct band gap crossover in two-dimensional WS2(1−x)Se2x alloys

Indirect to direct band gap crossover in two-dimensional WS2(1−x)Se2x alloys

Abstract In atomically thin transition metal dichalcogenide semiconductors, there is a crossover from indirect to direct band gap as the thickness drops to one monolayer, which comes with a fast increase of the photoluminescence signal. Here, we show that for different alloy compositions of WS2(1−x)...

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Autores principales: Cyrine Ernandes, Lama Khalil, Hela Almabrouk, Debora Pierucci, Biyuan Zheng, José Avila, Pavel Dudin, Julien Chaste, Fabrice Oehler, Marco Pala, Federico Bisti, Thibault Brulé, Emmanuel Lhuillier, Anlian Pan, Abdelkarim Ouerghi
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2021
Materias:
Materials of engineering and construction. Mechanics of materials
TA401-492
Chemistry
QD1-999
Acceso en línea:https://doaj.org/article/4f5cee023c774f3f8aba36b5f4a4d72c
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https://doaj.org/article/4f5cee023c774f3f8aba36b5f4a4d72c

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