Indirect to direct band gap crossover in two-dimensional WS2(1−x)Se2x alloys
Abstract In atomically thin transition metal dichalcogenide semiconductors, there is a crossover from indirect to direct band gap as the thickness drops to one monolayer, which comes with a fast increase of the photoluminescence signal. Here, we show that for different alloy compositions of WS2(1−x)...
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| Auteurs principaux: | , , , , , , , , , , , , , , |
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| Format: | article |
| Langue: | EN |
| Publié: |
Nature Portfolio
2021
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| Sujets: | |
| Accès en ligne: | https://doaj.org/article/4f5cee023c774f3f8aba36b5f4a4d72c |
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