Bright mid-infrared photoluminescence from high dislocation density epitaxial PbSe films on GaAs

We report on photoluminescence in the 3–7 µm mid-wave infrared (MWIR) range from sub-100 nm strained thin films of rocksalt PbSe(001) grown on GaAs(001) substrates by molecular beam epitaxy. These bare films, grown epitaxially at temperatures below 400 °C, luminesce brightly at room temperature and...

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Autores principales: Jarod Meyer, Aaron J. Muhowski, Leland Nordin, Eamonn Hughes, Brian Haidet, Daniel Wasserman, Kunal Mukherjee
Formato: article
Lenguaje:EN
Publicado: AIP Publishing LLC 2021
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Acceso en línea:https://doaj.org/article/50984fd053bb4503bbce57bd2d175dc7
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