Bright mid-infrared photoluminescence from high dislocation density epitaxial PbSe films on GaAs

We report on photoluminescence in the 3–7 µm mid-wave infrared (MWIR) range from sub-100 nm strained thin films of rocksalt PbSe(001) grown on GaAs(001) substrates by molecular beam epitaxy. These bare films, grown epitaxially at temperatures below 400 °C, luminesce brightly at room temperature and...

Descripción completa

Guardado en:

Detalles Bibliográficos
Autores principales:	Jarod Meyer, Aaron J. Muhowski, Leland Nordin, Eamonn Hughes, Brian Haidet, Daniel Wasserman, Kunal Mukherjee
Formato:	article
Lenguaje:	EN
Publicado:	AIP Publishing LLC 2021
Materias:	Biotechnology TP248.13-248.65 Physics QC1-999
Acceso en línea:	https://doaj.org/article/50984fd053bb4503bbce57bd2d175dc7
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

id	oai:doaj.org-article:50984fd053bb4503bbce57bd2d175dc7
record_format	dspace
spelling	oai:doaj.org-article:50984fd053bb4503bbce57bd2d175dc72021-12-01T18:51:23ZBright mid-infrared photoluminescence from high dislocation density epitaxial PbSe films on GaAs2166-532X10.1063/5.0070555https://doaj.org/article/50984fd053bb4503bbce57bd2d175dc72021-11-01T00:00:00Zhttp://dx.doi.org/10.1063/5.0070555https://doaj.org/toc/2166-532XWe report on photoluminescence in the 3–7 µm mid-wave infrared (MWIR) range from sub-100 nm strained thin films of rocksalt PbSe(001) grown on GaAs(001) substrates by molecular beam epitaxy. These bare films, grown epitaxially at temperatures below 400 °C, luminesce brightly at room temperature and have minority carrier lifetimes as long as 172 ns. The relatively long lifetimes in PbSe thin films are achievable despite threading dislocation densities exceeding 109 cm−2 arising from island growth on the nearly 8% lattice- and crystal-structure-mismatched GaAs substrate. Using quasi-continuous-wave and time-resolved photoluminescence, we show that the Shockley–Read–Hall recombination is slow in our high dislocation density PbSe films at room temperature, a hallmark of defect tolerance. Power-dependent photoluminescence and high injection excess carrier lifetimes at room temperature suggest that degenerate Auger recombination limits the efficiency of our films, although the Auger recombination rates are significantly lower than equivalent III–V bulk materials and even a bit slower than expectations for bulk PbSe. Consequently, the combined effects of defect tolerance and low Auger recombination rates yield an estimated peak internal quantum efficiency of roughly 30% at room temperature, unparalleled in the MWIR for a severely lattice-mismatched thin film. We anticipate substantial opportunities for improving performance by optimizing crystal growth as well as understanding Auger processes in thin films. These results highlight the unique opportunity to harness the unusual chemical bonding in PbSe and related IV–VI semiconductors for heterogeneously integrated mid-infrared light sources constrained by tight thermal budgets in new device designs.Jarod MeyerAaron J. MuhowskiLeland NordinEamonn HughesBrian HaidetDaniel WassermanKunal MukherjeeAIP Publishing LLCarticleBiotechnologyTP248.13-248.65PhysicsQC1-999ENAPL Materials, Vol 9, Iss 11, Pp 111112-111112-9 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Biotechnology TP248.13-248.65 Physics QC1-999
spellingShingle	Biotechnology TP248.13-248.65 Physics QC1-999 Jarod Meyer Aaron J. Muhowski Leland Nordin Eamonn Hughes Brian Haidet Daniel Wasserman Kunal Mukherjee Bright mid-infrared photoluminescence from high dislocation density epitaxial PbSe films on GaAs
description	We report on photoluminescence in the 3–7 µm mid-wave infrared (MWIR) range from sub-100 nm strained thin films of rocksalt PbSe(001) grown on GaAs(001) substrates by molecular beam epitaxy. These bare films, grown epitaxially at temperatures below 400 °C, luminesce brightly at room temperature and have minority carrier lifetimes as long as 172 ns. The relatively long lifetimes in PbSe thin films are achievable despite threading dislocation densities exceeding 109 cm−2 arising from island growth on the nearly 8% lattice- and crystal-structure-mismatched GaAs substrate. Using quasi-continuous-wave and time-resolved photoluminescence, we show that the Shockley–Read–Hall recombination is slow in our high dislocation density PbSe films at room temperature, a hallmark of defect tolerance. Power-dependent photoluminescence and high injection excess carrier lifetimes at room temperature suggest that degenerate Auger recombination limits the efficiency of our films, although the Auger recombination rates are significantly lower than equivalent III–V bulk materials and even a bit slower than expectations for bulk PbSe. Consequently, the combined effects of defect tolerance and low Auger recombination rates yield an estimated peak internal quantum efficiency of roughly 30% at room temperature, unparalleled in the MWIR for a severely lattice-mismatched thin film. We anticipate substantial opportunities for improving performance by optimizing crystal growth as well as understanding Auger processes in thin films. These results highlight the unique opportunity to harness the unusual chemical bonding in PbSe and related IV–VI semiconductors for heterogeneously integrated mid-infrared light sources constrained by tight thermal budgets in new device designs.
format	article
author	Jarod Meyer Aaron J. Muhowski Leland Nordin Eamonn Hughes Brian Haidet Daniel Wasserman Kunal Mukherjee
author_facet	Jarod Meyer Aaron J. Muhowski Leland Nordin Eamonn Hughes Brian Haidet Daniel Wasserman Kunal Mukherjee
author_sort	Jarod Meyer
title	Bright mid-infrared photoluminescence from high dislocation density epitaxial PbSe films on GaAs
title_short	Bright mid-infrared photoluminescence from high dislocation density epitaxial PbSe films on GaAs
title_full	Bright mid-infrared photoluminescence from high dislocation density epitaxial PbSe films on GaAs
title_fullStr	Bright mid-infrared photoluminescence from high dislocation density epitaxial PbSe films on GaAs
title_full_unstemmed	Bright mid-infrared photoluminescence from high dislocation density epitaxial PbSe films on GaAs
title_sort	bright mid-infrared photoluminescence from high dislocation density epitaxial pbse films on gaas
publisher	AIP Publishing LLC
publishDate	2021
url	https://doaj.org/article/50984fd053bb4503bbce57bd2d175dc7
work_keys_str_mv	AT jarodmeyer brightmidinfraredphotoluminescencefromhighdislocationdensityepitaxialpbsefilmsongaas AT aaronjmuhowski brightmidinfraredphotoluminescencefromhighdislocationdensityepitaxialpbsefilmsongaas AT lelandnordin brightmidinfraredphotoluminescencefromhighdislocationdensityepitaxialpbsefilmsongaas AT eamonnhughes brightmidinfraredphotoluminescencefromhighdislocationdensityepitaxialpbsefilmsongaas AT brianhaidet brightmidinfraredphotoluminescencefromhighdislocationdensityepitaxialpbsefilmsongaas AT danielwasserman brightmidinfraredphotoluminescencefromhighdislocationdensityepitaxialpbsefilmsongaas AT kunalmukherjee brightmidinfraredphotoluminescencefromhighdislocationdensityepitaxialpbsefilmsongaas
_version_	1718404691294945280

Bright mid-infrared photoluminescence from high dislocation density epitaxial PbSe films on GaAs

Ejemplares similares