The dualism between adatom- and vacancy-based single crystal growth models
In homoepitaxial crystal growth, four established modes describe atom deposition on a single crystal surface. Here the authors present a model that shows that, for each adatom growth mode, there exists an analogous but inverse version for vacancy growth. This also applies to combined growth.
Saved in:
Main Authors: | , , |
---|---|
Format: | article |
Language: | EN |
Published: |
Nature Portfolio
2019
|
Subjects: | |
Online Access: | https://doaj.org/article/51b77bda677c4fae81c5ff74231554e2 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|