The dualism between adatom- and vacancy-based single crystal growth models

In homoepitaxial crystal growth, four established modes describe atom deposition on a single crystal surface. Here the authors present a model that shows that, for each adatom growth mode, there exists an analogous but inverse version for vacancy growth. This also applies to combined growth.

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Bibliographic Details
Main Authors: Marcel J. Rost, Leon Jacobse, Marc T. M. Koper
Format: article
Language:EN
Published: Nature Portfolio 2019
Subjects:
Q
Online Access:https://doaj.org/article/51b77bda677c4fae81c5ff74231554e2
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