Power optimized variation aware dual-threshold SRAM cell design technique

Aminul Islam1, Mohd Hasan21Department of Electronics and Communication Engineering, Birla Institute of Technology, Mesra, Ranchi, Jharkhand, India; 2Department of Electronics Engineering, Aligarh Muslim University, Aligarh, Uttar Pradesh, IndiaAbstract: Bulk complementary metal-oxide semiconductor (...

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Bibliographic Details
Main Authors: Aminul Islam, Mohd Hasan
Format: article
Language:EN
Published: Dove Medical Press 2011
Subjects:
Online Access:https://doaj.org/article/51f72d6328774c3aa2acae6eed7ef7e7
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