Power optimized variation aware dual-threshold SRAM cell design technique
Aminul Islam1, Mohd Hasan21Department of Electronics and Communication Engineering, Birla Institute of Technology, Mesra, Ranchi, Jharkhand, India; 2Department of Electronics Engineering, Aligarh Muslim University, Aligarh, Uttar Pradesh, IndiaAbstract: Bulk complementary metal-oxide semiconductor (...
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| Format: | article |
| Langue: | EN |
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Dove Medical Press
2011
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| Accès en ligne: | https://doaj.org/article/51f72d6328774c3aa2acae6eed7ef7e7 |
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