Power optimized variation aware dual-threshold SRAM cell design technique
Aminul Islam1, Mohd Hasan21Department of Electronics and Communication Engineering, Birla Institute of Technology, Mesra, Ranchi, Jharkhand, India; 2Department of Electronics Engineering, Aligarh Muslim University, Aligarh, Uttar Pradesh, IndiaAbstract: Bulk complementary metal-oxide semiconductor (...
Guardado en:
| Autores principales: | , |
|---|---|
| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
Dove Medical Press
2011
|
| Materias: | |
| Acceso en línea: | https://doaj.org/article/51f72d6328774c3aa2acae6eed7ef7e7 |
| Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|