Tensoresistive effect in single crystal microwires of PbTe doped with Tl

Results of room temperature measurements of tensoresistive effect in thin single crystal microwires of Pb1-xTlxTe (x=0.0000 ÷ 0.0025, d = 5 ÷ 20 μm) obtained of the melted com- pound of corresponding composition by the filling of quartz capillary followed by the material crystallization are prese...

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Autor principal: Zasaviţchi, Efim
Formato: article
Lenguaje:EN
Publicado: D.Ghitu Institute of Electronic Engineering and Nanotechnologies 2007
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Acceso en línea:https://doaj.org/article/53a1aeba83e7478b9a1e2f50eb3d868b
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