Tensoresistive effect in single crystal microwires of PbTe doped with Tl
Results of room temperature measurements of tensoresistive effect in thin single crystal microwires of Pb1-xTlxTe (x=0.0000 ÷ 0.0025, d = 5 ÷ 20 μm) obtained of the melted com- pound of corresponding composition by the filling of quartz capillary followed by the material crystallization are prese...
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
D.Ghitu Institute of Electronic Engineering and Nanotechnologies
2007
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/53a1aeba83e7478b9a1e2f50eb3d868b |
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| Sumario: | Results of room temperature measurements of tensoresistive effect in thin single crystal
microwires of Pb1-xTlxTe (x=0.0000 ÷ 0.0025, d = 5 ÷ 20 μm) obtained of the melted com-
pound of corresponding composition by the filling of quartz capillary followed by the material crystallization are presented. For the samples corresponding to chemical composition with thallium concentration x ~0.0025 an essential increase of the tensoresistive effect in comparison with nondoped samples is observed; i.e., resistance changes for elastic elongations per
unit length of a crystal. Various mechanisms which can lead to observed anomalies, including
resonance scattering are discussed. Obtained experimental results allow us to suppose that the
observed peculiarities can be interpreted on the basis of a model of Tl impurity band in PbTe.
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