Tensoresistive effect in single crystal microwires of PbTe doped with Tl
Results of room temperature measurements of tensoresistive effect in thin single crystal microwires of Pb1-xTlxTe (x=0.0000 ÷ 0.0025, d = 5 ÷ 20 μm) obtained of the melted com- pound of corresponding composition by the filling of quartz capillary followed by the material crystallization are prese...
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D.Ghitu Institute of Electronic Engineering and Nanotechnologies
2007
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oai:doaj.org-article:53a1aeba83e7478b9a1e2f50eb3d868b2021-11-21T12:08:12ZTensoresistive effect in single crystal microwires of PbTe doped with Tl2537-63651810-648Xhttps://doaj.org/article/53a1aeba83e7478b9a1e2f50eb3d868b2007-05-01T00:00:00Zhttps://mjps.nanotech.md/archive/2007/article/3721https://doaj.org/toc/1810-648Xhttps://doaj.org/toc/2537-6365Results of room temperature measurements of tensoresistive effect in thin single crystal microwires of Pb1-xTlxTe (x=0.0000 ÷ 0.0025, d = 5 ÷ 20 μm) obtained of the melted com- pound of corresponding composition by the filling of quartz capillary followed by the material crystallization are presented. For the samples corresponding to chemical composition with thallium concentration x ~0.0025 an essential increase of the tensoresistive effect in comparison with nondoped samples is observed; i.e., resistance changes for elastic elongations per unit length of a crystal. Various mechanisms which can lead to observed anomalies, including resonance scattering are discussed. Obtained experimental results allow us to suppose that the observed peculiarities can be interpreted on the basis of a model of Tl impurity band in PbTe. Zasaviţchi, EfimD.Ghitu Institute of Electronic Engineering and NanotechnologiesarticlePhysicsQC1-999ElectronicsTK7800-8360ENMoldavian Journal of the Physical Sciences, Vol 6, Iss 2, Pp 222-227 (2007) |
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DOAJ |
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DOAJ |
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EN |
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Physics QC1-999 Electronics TK7800-8360 |
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Physics QC1-999 Electronics TK7800-8360 Zasaviţchi, Efim Tensoresistive effect in single crystal microwires of PbTe doped with Tl |
| description |
Results of room temperature measurements of tensoresistive effect in thin single crystal
microwires of Pb1-xTlxTe (x=0.0000 ÷ 0.0025, d = 5 ÷ 20 μm) obtained of the melted com-
pound of corresponding composition by the filling of quartz capillary followed by the material crystallization are presented. For the samples corresponding to chemical composition with thallium concentration x ~0.0025 an essential increase of the tensoresistive effect in comparison with nondoped samples is observed; i.e., resistance changes for elastic elongations per
unit length of a crystal. Various mechanisms which can lead to observed anomalies, including
resonance scattering are discussed. Obtained experimental results allow us to suppose that the
observed peculiarities can be interpreted on the basis of a model of Tl impurity band in PbTe.
|
| format |
article |
| author |
Zasaviţchi, Efim |
| author_facet |
Zasaviţchi, Efim |
| author_sort |
Zasaviţchi, Efim |
| title |
Tensoresistive effect in single crystal microwires of PbTe doped with Tl |
| title_short |
Tensoresistive effect in single crystal microwires of PbTe doped with Tl |
| title_full |
Tensoresistive effect in single crystal microwires of PbTe doped with Tl |
| title_fullStr |
Tensoresistive effect in single crystal microwires of PbTe doped with Tl |
| title_full_unstemmed |
Tensoresistive effect in single crystal microwires of PbTe doped with Tl |
| title_sort |
tensoresistive effect in single crystal microwires of pbte doped with tl |
| publisher |
D.Ghitu Institute of Electronic Engineering and Nanotechnologies |
| publishDate |
2007 |
| url |
https://doaj.org/article/53a1aeba83e7478b9a1e2f50eb3d868b |
| work_keys_str_mv |
AT zasavitchiefim tensoresistiveeffectinsinglecrystalmicrowiresofpbtedopedwithtl |
| _version_ |
1718419185169596416 |