Enhanced ferroelectric switching speed of Si-doped HfO2 thin film tailored by oxygen deficiency

Abstract Investigations concerning oxygen deficiency will increase our understanding of those factors that govern the overall material properties. Various studies have examined the relationship between oxygen deficiency and the phase transformation from a nonpolar phase to a polar phase in HfO2 thin...

Description complète

Enregistré dans:
Détails bibliographiques
Auteurs principaux: Kyoungjun Lee, Kunwoo Park, Hyun-Jae Lee, Myeong Seop Song, Kyu Cheol Lee, Jin Namkung, Jun Hee Lee, Jungwon Park, Seung Chul Chae
Format: article
Langue:EN
Publié: Nature Portfolio 2021
Sujets:
R
Q
Accès en ligne:https://doaj.org/article/54100e1171b5496c96e61a4182e053c2
Tags: Ajouter un tag
Pas de tags, Soyez le premier à ajouter un tag!