Enhanced ferroelectric switching speed of Si-doped HfO2 thin film tailored by oxygen deficiency
Abstract Investigations concerning oxygen deficiency will increase our understanding of those factors that govern the overall material properties. Various studies have examined the relationship between oxygen deficiency and the phase transformation from a nonpolar phase to a polar phase in HfO2 thin...
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Auteurs principaux: | , , , , , , , , |
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Format: | article |
Langue: | EN |
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Nature Portfolio
2021
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Accès en ligne: | https://doaj.org/article/54100e1171b5496c96e61a4182e053c2 |
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