Enhanced ferroelectric switching speed of Si-doped HfO2 thin film tailored by oxygen deficiency

Abstract Investigations concerning oxygen deficiency will increase our understanding of those factors that govern the overall material properties. Various studies have examined the relationship between oxygen deficiency and the phase transformation from a nonpolar phase to a polar phase in HfO2 thin...

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Autores principales:	Kyoungjun Lee, Kunwoo Park, Hyun-Jae Lee, Myeong Seop Song, Kyu Cheol Lee, Jin Namkung, Jun Hee Lee, Jungwon Park, Seung Chul Chae
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/54100e1171b5496c96e61a4182e053c2
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spelling	oai:doaj.org-article:54100e1171b5496c96e61a4182e053c22021-12-02T17:05:12ZEnhanced ferroelectric switching speed of Si-doped HfO2 thin film tailored by oxygen deficiency10.1038/s41598-021-85773-72045-2322https://doaj.org/article/54100e1171b5496c96e61a4182e053c22021-03-01T00:00:00Zhttps://doi.org/10.1038/s41598-021-85773-7https://doaj.org/toc/2045-2322Abstract Investigations concerning oxygen deficiency will increase our understanding of those factors that govern the overall material properties. Various studies have examined the relationship between oxygen deficiency and the phase transformation from a nonpolar phase to a polar phase in HfO2 thin films. However, there are few reports on the effects of oxygen deficiencies on the switching dynamics of the ferroelectric phase itself. Herein, we report the oxygen- deficiency induced enhancement of ferroelectric switching properties of Si-doped HfO2 thin films. By controlling the annealing conditions, we controlled the oxygen deficiency concentration in the ferroelectric orthorhombic HfO2 phase. Rapid high-temperature (800 °C) annealing of the HfO2 film accelerated the characteristic switching speed compared to low-temperature (600 °C) annealing. Scanning transmission electron microscopy and electron energy-loss spectroscopy (EELS) revealed that thermal annealing increased oxygen deficiencies, and first-principles calculations demonstrated a reduction of the energy barrier of the polarization flip with increased oxygen deficiency. A Monte Carlo simulation for the variation in the energy barrier of the polarization flipping confirmed the increase of characteristic switching speed.Kyoungjun LeeKunwoo ParkHyun-Jae LeeMyeong Seop SongKyu Cheol LeeJin NamkungJun Hee LeeJungwon ParkSeung Chul ChaeNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 11, Iss 1, Pp 1-9 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Kyoungjun Lee Kunwoo Park Hyun-Jae Lee Myeong Seop Song Kyu Cheol Lee Jin Namkung Jun Hee Lee Jungwon Park Seung Chul Chae Enhanced ferroelectric switching speed of Si-doped HfO2 thin film tailored by oxygen deficiency
description	Abstract Investigations concerning oxygen deficiency will increase our understanding of those factors that govern the overall material properties. Various studies have examined the relationship between oxygen deficiency and the phase transformation from a nonpolar phase to a polar phase in HfO2 thin films. However, there are few reports on the effects of oxygen deficiencies on the switching dynamics of the ferroelectric phase itself. Herein, we report the oxygen- deficiency induced enhancement of ferroelectric switching properties of Si-doped HfO2 thin films. By controlling the annealing conditions, we controlled the oxygen deficiency concentration in the ferroelectric orthorhombic HfO2 phase. Rapid high-temperature (800 °C) annealing of the HfO2 film accelerated the characteristic switching speed compared to low-temperature (600 °C) annealing. Scanning transmission electron microscopy and electron energy-loss spectroscopy (EELS) revealed that thermal annealing increased oxygen deficiencies, and first-principles calculations demonstrated a reduction of the energy barrier of the polarization flip with increased oxygen deficiency. A Monte Carlo simulation for the variation in the energy barrier of the polarization flipping confirmed the increase of characteristic switching speed.
format	article
author	Kyoungjun Lee Kunwoo Park Hyun-Jae Lee Myeong Seop Song Kyu Cheol Lee Jin Namkung Jun Hee Lee Jungwon Park Seung Chul Chae
author_facet	Kyoungjun Lee Kunwoo Park Hyun-Jae Lee Myeong Seop Song Kyu Cheol Lee Jin Namkung Jun Hee Lee Jungwon Park Seung Chul Chae
author_sort	Kyoungjun Lee
title	Enhanced ferroelectric switching speed of Si-doped HfO2 thin film tailored by oxygen deficiency
title_short	Enhanced ferroelectric switching speed of Si-doped HfO2 thin film tailored by oxygen deficiency
title_full	Enhanced ferroelectric switching speed of Si-doped HfO2 thin film tailored by oxygen deficiency
title_fullStr	Enhanced ferroelectric switching speed of Si-doped HfO2 thin film tailored by oxygen deficiency
title_full_unstemmed	Enhanced ferroelectric switching speed of Si-doped HfO2 thin film tailored by oxygen deficiency
title_sort	enhanced ferroelectric switching speed of si-doped hfo2 thin film tailored by oxygen deficiency
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/54100e1171b5496c96e61a4182e053c2
work_keys_str_mv	AT kyoungjunlee enhancedferroelectricswitchingspeedofsidopedhfo2thinfilmtailoredbyoxygendeficiency AT kunwoopark enhancedferroelectricswitchingspeedofsidopedhfo2thinfilmtailoredbyoxygendeficiency AT hyunjaelee enhancedferroelectricswitchingspeedofsidopedhfo2thinfilmtailoredbyoxygendeficiency AT myeongseopsong enhancedferroelectricswitchingspeedofsidopedhfo2thinfilmtailoredbyoxygendeficiency AT kyucheollee enhancedferroelectricswitchingspeedofsidopedhfo2thinfilmtailoredbyoxygendeficiency AT jinnamkung enhancedferroelectricswitchingspeedofsidopedhfo2thinfilmtailoredbyoxygendeficiency AT junheelee enhancedferroelectricswitchingspeedofsidopedhfo2thinfilmtailoredbyoxygendeficiency AT jungwonpark enhancedferroelectricswitchingspeedofsidopedhfo2thinfilmtailoredbyoxygendeficiency AT seungchulchae enhancedferroelectricswitchingspeedofsidopedhfo2thinfilmtailoredbyoxygendeficiency
_version_	1718381790992793600

Enhanced ferroelectric switching speed of Si-doped HfO2 thin film tailored by oxygen deficiency

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