Lead chalcogenide IR-emitters and detectors on Si-substrates

Narrow gap IV-VI (lead chalcogenide) compounds are employed since long time as mid-IR-detectors and -lasers. IV-VIs are tolerant to structural defects (dislocations). This allows lattice mismatched MBE-growth on foreign substrates like Si which offers significant advantages with respect to size...

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Autores principales: Zogg, H., Arnold, M., Zimin, D., Alchalabi, K.
Formato: article
Lenguaje:EN
Publicado: D.Ghitu Institute of Electronic Engineering and Nanotechnologies 2006
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Acceso en línea:https://doaj.org/article/552e816c5b3e4eca86ea6904a821b3f3
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