Lead chalcogenide IR-emitters and detectors on Si-substrates
Narrow gap IV-VI (lead chalcogenide) compounds are employed since long time as mid-IR-detectors and -lasers. IV-VIs are tolerant to structural defects (dislocations). This allows lattice mismatched MBE-growth on foreign substrates like Si which offers significant advantages with respect to size...
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| Main Authors: | , , , |
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| Format: | article |
| Language: | EN |
| Published: |
D.Ghitu Institute of Electronic Engineering and Nanotechnologies
2006
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| Subjects: | |
| Online Access: | https://doaj.org/article/552e816c5b3e4eca86ea6904a821b3f3 |
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