Lead chalcogenide IR-emitters and detectors on Si-substrates
Narrow gap IV-VI (lead chalcogenide) compounds are employed since long time as mid-IR-detectors and -lasers. IV-VIs are tolerant to structural defects (dislocations). This allows lattice mismatched MBE-growth on foreign substrates like Si which offers significant advantages with respect to size...
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| Autores principales: | , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
D.Ghitu Institute of Electronic Engineering and Nanotechnologies
2006
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/552e816c5b3e4eca86ea6904a821b3f3 |
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| Sumario: | Narrow gap IV-VI (lead chalcogenide) compounds are employed since long time as
mid-IR-detectors and -lasers. IV-VIs are tolerant to structural defects (dislocations). This
allows lattice mismatched MBE-growth on foreign substrates like Si which offers significant
advantages with respect to size, costs and thermal conductivities.
In addition, IV-VIs are unique as regards design of Bragg mirrors because of the very
high index contrast between IV-VI materials (nH = 4-5) and BaF2 (nL=1.43). A few pairs of
quarter wavelength nH/nL-stacks suffice to obtain very high reflectivities R>99%.
We review some of our results for different devices: Infrared sensor arrays for thermal
imaging on active Si read-out chips, RCEDs (resonant cavity enhanced IR detectors),
optically pumped PbSe/Pb1-xEuxSe edge emitting DH (double heterostructure) or QW
(quantum well) lasers on Si substrates and “wavelength transformers”, VCSEL (vertical
cavity surface emitting laser) structures operated in sub-threshold. |
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