Lead chalcogenide IR-emitters and detectors on Si-substrates

Narrow gap IV-VI (lead chalcogenide) compounds are employed since long time as mid-IR-detectors and -lasers. IV-VIs are tolerant to structural defects (dislocations). This allows lattice mismatched MBE-growth on foreign substrates like Si which offers significant advantages with respect to size...

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Autores principales:	Zogg, H., Arnold, M., Zimin, D., Alchalabi, K.
Formato:	article
Lenguaje:	EN
Publicado:	D.Ghitu Institute of Electronic Engineering and Nanotechnologies 2006
Materias:	Physics QC1-999 Electronics TK7800-8360
Acceso en línea:	https://doaj.org/article/552e816c5b3e4eca86ea6904a821b3f3
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spelling	oai:doaj.org-article:552e816c5b3e4eca86ea6904a821b3f32021-11-21T12:10:26ZLead chalcogenide IR-emitters and detectors on Si-substrates 2537-63651810-648Xhttps://doaj.org/article/552e816c5b3e4eca86ea6904a821b3f32006-01-01T00:00:00Zhttps://mjps.nanotech.md/archive/2006/article/3423https://doaj.org/toc/1810-648Xhttps://doaj.org/toc/2537-6365Narrow gap IV-VI (lead chalcogenide) compounds are employed since long time as mid-IR-detectors and -lasers. IV-VIs are tolerant to structural defects (dislocations). This allows lattice mismatched MBE-growth on foreign substrates like Si which offers significant advantages with respect to size, costs and thermal conductivities. In addition, IV-VIs are unique as regards design of Bragg mirrors because of the very high index contrast between IV-VI materials (nH = 4-5) and BaF2 (nL=1.43). A few pairs of quarter wavelength nH/nL-stacks suffice to obtain very high reflectivities R>99%. We review some of our results for different devices: Infrared sensor arrays for thermal imaging on active Si read-out chips, RCEDs (resonant cavity enhanced IR detectors), optically pumped PbSe/Pb1-xEuxSe edge emitting DH (double heterostructure) or QW (quantum well) lasers on Si substrates and “wavelength transformers”, VCSEL (vertical cavity surface emitting laser) structures operated in sub-threshold. Zogg, H.Arnold, M.Zimin, D.Alchalabi, K.D.Ghitu Institute of Electronic Engineering and NanotechnologiesarticlePhysicsQC1-999ElectronicsTK7800-8360ENMoldavian Journal of the Physical Sciences, Vol 5, Iss 1, Pp 88-96 (2006)
institution	DOAJ
collection	DOAJ
language	EN
topic	Physics QC1-999 Electronics TK7800-8360
spellingShingle	Physics QC1-999 Electronics TK7800-8360 Zogg, H. Arnold, M. Zimin, D. Alchalabi, K. Lead chalcogenide IR-emitters and detectors on Si-substrates
description	Narrow gap IV-VI (lead chalcogenide) compounds are employed since long time as mid-IR-detectors and -lasers. IV-VIs are tolerant to structural defects (dislocations). This allows lattice mismatched MBE-growth on foreign substrates like Si which offers significant advantages with respect to size, costs and thermal conductivities. In addition, IV-VIs are unique as regards design of Bragg mirrors because of the very high index contrast between IV-VI materials (nH = 4-5) and BaF2 (nL=1.43). A few pairs of quarter wavelength nH/nL-stacks suffice to obtain very high reflectivities R>99%. We review some of our results for different devices: Infrared sensor arrays for thermal imaging on active Si read-out chips, RCEDs (resonant cavity enhanced IR detectors), optically pumped PbSe/Pb1-xEuxSe edge emitting DH (double heterostructure) or QW (quantum well) lasers on Si substrates and “wavelength transformers”, VCSEL (vertical cavity surface emitting laser) structures operated in sub-threshold.
format	article
author	Zogg, H. Arnold, M. Zimin, D. Alchalabi, K.
author_facet	Zogg, H. Arnold, M. Zimin, D. Alchalabi, K.
author_sort	Zogg, H.
title	Lead chalcogenide IR-emitters and detectors on Si-substrates
title_short	Lead chalcogenide IR-emitters and detectors on Si-substrates
title_full	Lead chalcogenide IR-emitters and detectors on Si-substrates
title_fullStr	Lead chalcogenide IR-emitters and detectors on Si-substrates
title_full_unstemmed	Lead chalcogenide IR-emitters and detectors on Si-substrates
title_sort	lead chalcogenide ir-emitters and detectors on si-substrates
publisher	D.Ghitu Institute of Electronic Engineering and Nanotechnologies
publishDate	2006
url	https://doaj.org/article/552e816c5b3e4eca86ea6904a821b3f3
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Lead chalcogenide IR-emitters and detectors on Si-substrates

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