Large-area epitaxial growth of curvature-stabilized ABC trilayer graphene

Large-area epitaxial growth of curvature-stabilized ABC trilayer graphene

The semiconducting ABC configuration of trilayer graphene is more challenging to grow on large scales than its semimetallic ABA counterpart. Here, an approach to trilayer growth via chemical vapor deposition is presented that utilizes substrate curvature to yield enhanced fraction and size of ABC do...

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Auteurs principaux: Zhaoli Gao, Sheng Wang, Joel Berry, Qicheng Zhang, Julian Gebhardt, William M. Parkin, Jose Avila, Hemian Yi, Chaoyu Chen, Sebastian Hurtado-Parra, Marija Drndić, Andrew M. Rappe, David J. Srolovitz, James M. Kikkawa, Zhengtang Luo, Maria C. Asensio, Feng Wang, A. T. Charlie Johnson
Format: article
Langue:EN
Publié: Nature Portfolio 2020
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Science
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Accès en ligne:https://doaj.org/article/56c581fa05234c709cfe115631e4b2c2
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https://doaj.org/article/56c581fa05234c709cfe115631e4b2c2

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