Large-area epitaxial growth of curvature-stabilized ABC trilayer graphene

The semiconducting ABC configuration of trilayer graphene is more challenging to grow on large scales than its semimetallic ABA counterpart. Here, an approach to trilayer growth via chemical vapor deposition is presented that utilizes substrate curvature to yield enhanced fraction and size of ABC do...

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Autores principales:	Zhaoli Gao, Sheng Wang, Joel Berry, Qicheng Zhang, Julian Gebhardt, William M. Parkin, Jose Avila, Hemian Yi, Chaoyu Chen, Sebastian Hurtado-Parra, Marija Drndić, Andrew M. Rappe, David J. Srolovitz, James M. Kikkawa, Zhengtang Luo, Maria C. Asensio, Feng Wang, A. T. Charlie Johnson
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2020
Materias:	Science Q
Acceso en línea:	https://doaj.org/article/56c581fa05234c709cfe115631e4b2c2
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spelling	oai:doaj.org-article:56c581fa05234c709cfe115631e4b2c22021-12-02T14:41:27ZLarge-area epitaxial growth of curvature-stabilized ABC trilayer graphene10.1038/s41467-019-14022-32041-1723https://doaj.org/article/56c581fa05234c709cfe115631e4b2c22020-01-01T00:00:00Zhttps://doi.org/10.1038/s41467-019-14022-3https://doaj.org/toc/2041-1723The semiconducting ABC configuration of trilayer graphene is more challenging to grow on large scales than its semimetallic ABA counterpart. Here, an approach to trilayer growth via chemical vapor deposition is presented that utilizes substrate curvature to yield enhanced fraction and size of ABC domains.Zhaoli GaoSheng WangJoel BerryQicheng ZhangJulian GebhardtWilliam M. ParkinJose AvilaHemian YiChaoyu ChenSebastian Hurtado-ParraMarija DrndićAndrew M. RappeDavid J. SrolovitzJames M. KikkawaZhengtang LuoMaria C. AsensioFeng WangA. T. Charlie JohnsonNature PortfolioarticleScienceQENNature Communications, Vol 11, Iss 1, Pp 1-10 (2020)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q Zhaoli Gao Sheng Wang Joel Berry Qicheng Zhang Julian Gebhardt William M. Parkin Jose Avila Hemian Yi Chaoyu Chen Sebastian Hurtado-Parra Marija Drndić Andrew M. Rappe David J. Srolovitz James M. Kikkawa Zhengtang Luo Maria C. Asensio Feng Wang A. T. Charlie Johnson Large-area epitaxial growth of curvature-stabilized ABC trilayer graphene
description	The semiconducting ABC configuration of trilayer graphene is more challenging to grow on large scales than its semimetallic ABA counterpart. Here, an approach to trilayer growth via chemical vapor deposition is presented that utilizes substrate curvature to yield enhanced fraction and size of ABC domains.
format	article
author	Zhaoli Gao Sheng Wang Joel Berry Qicheng Zhang Julian Gebhardt William M. Parkin Jose Avila Hemian Yi Chaoyu Chen Sebastian Hurtado-Parra Marija Drndić Andrew M. Rappe David J. Srolovitz James M. Kikkawa Zhengtang Luo Maria C. Asensio Feng Wang A. T. Charlie Johnson
author_facet	Zhaoli Gao Sheng Wang Joel Berry Qicheng Zhang Julian Gebhardt William M. Parkin Jose Avila Hemian Yi Chaoyu Chen Sebastian Hurtado-Parra Marija Drndić Andrew M. Rappe David J. Srolovitz James M. Kikkawa Zhengtang Luo Maria C. Asensio Feng Wang A. T. Charlie Johnson
author_sort	Zhaoli Gao
title	Large-area epitaxial growth of curvature-stabilized ABC trilayer graphene
title_short	Large-area epitaxial growth of curvature-stabilized ABC trilayer graphene
title_full	Large-area epitaxial growth of curvature-stabilized ABC trilayer graphene
title_fullStr	Large-area epitaxial growth of curvature-stabilized ABC trilayer graphene
title_full_unstemmed	Large-area epitaxial growth of curvature-stabilized ABC trilayer graphene
title_sort	large-area epitaxial growth of curvature-stabilized abc trilayer graphene
publisher	Nature Portfolio
publishDate	2020
url	https://doaj.org/article/56c581fa05234c709cfe115631e4b2c2
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Large-area epitaxial growth of curvature-stabilized ABC trilayer graphene

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