Development of a High-Resolution Acoustic Sensor Based on ZnO Film Deposited by the RF Magnetron Sputtering Method
In the study, an acoustic sensor for a high-resolution acoustic microscope was fabricated using zinc oxide (ZnO) piezoelectric ceramics. The c-cut sapphire was processed into a lens shape to deposit a ZnO film using radio frequency (RF) magnetron sputtering, and an upper and a lower electrode were d...
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oai:doaj.org-article:570c69667d414eb28aca04165f8dd1d62021-11-25T18:14:17ZDevelopment of a High-Resolution Acoustic Sensor Based on ZnO Film Deposited by the RF Magnetron Sputtering Method10.3390/ma142268701996-1944https://doaj.org/article/570c69667d414eb28aca04165f8dd1d62021-11-01T00:00:00Zhttps://www.mdpi.com/1996-1944/14/22/6870https://doaj.org/toc/1996-1944In the study, an acoustic sensor for a high-resolution acoustic microscope was fabricated using zinc oxide (ZnO) piezoelectric ceramics. The c-cut sapphire was processed into a lens shape to deposit a ZnO film using radio frequency (RF) magnetron sputtering, and an upper and a lower electrode were deposited using E-beam evaporation. The electrode was a Au thin film, and a Ti thin film was used as an adhesion layer. The surface microstructure of the ZnO film was observed using a scanning electron microscope (SEM), the thickness of the film was measured using a focused ion beam (FIB) for piezoelectric ceramics deposited on the sapphire wafer, and the thickness of ZnO was measured to be 4.87 μm. As a result of analyzing the crystal growth plane using X-ray diffraction (XRD) analysis, it was confirmed that the piezoelectric characteristics were grown to the (0002) plane. The sensor fabricated in this study had a center frequency of 352 MHz. The bandwidth indicates the range of upper (375 MHz) and lower (328 MHz) frequencies at the −6 dB level of the center frequency. As a result of image analysis using the resolution chart, the resolution was about 1 μm.Dong-Chan KangJeong-Nyeon KimIk-Keun ParkMDPI AGarticlehigh-resolution scanning acoustic microscope (HR-SAM)zinc oxide filmpiezoelectric ceramicsacoustic sensorTechnologyTElectrical engineering. Electronics. Nuclear engineeringTK1-9971Engineering (General). Civil engineering (General)TA1-2040MicroscopyQH201-278.5Descriptive and experimental mechanicsQC120-168.85ENMaterials, Vol 14, Iss 6870, p 6870 (2021) |
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high-resolution scanning acoustic microscope (HR-SAM) zinc oxide film piezoelectric ceramics acoustic sensor Technology T Electrical engineering. Electronics. Nuclear engineering TK1-9971 Engineering (General). Civil engineering (General) TA1-2040 Microscopy QH201-278.5 Descriptive and experimental mechanics QC120-168.85 |
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high-resolution scanning acoustic microscope (HR-SAM) zinc oxide film piezoelectric ceramics acoustic sensor Technology T Electrical engineering. Electronics. Nuclear engineering TK1-9971 Engineering (General). Civil engineering (General) TA1-2040 Microscopy QH201-278.5 Descriptive and experimental mechanics QC120-168.85 Dong-Chan Kang Jeong-Nyeon Kim Ik-Keun Park Development of a High-Resolution Acoustic Sensor Based on ZnO Film Deposited by the RF Magnetron Sputtering Method |
description |
In the study, an acoustic sensor for a high-resolution acoustic microscope was fabricated using zinc oxide (ZnO) piezoelectric ceramics. The c-cut sapphire was processed into a lens shape to deposit a ZnO film using radio frequency (RF) magnetron sputtering, and an upper and a lower electrode were deposited using E-beam evaporation. The electrode was a Au thin film, and a Ti thin film was used as an adhesion layer. The surface microstructure of the ZnO film was observed using a scanning electron microscope (SEM), the thickness of the film was measured using a focused ion beam (FIB) for piezoelectric ceramics deposited on the sapphire wafer, and the thickness of ZnO was measured to be 4.87 μm. As a result of analyzing the crystal growth plane using X-ray diffraction (XRD) analysis, it was confirmed that the piezoelectric characteristics were grown to the (0002) plane. The sensor fabricated in this study had a center frequency of 352 MHz. The bandwidth indicates the range of upper (375 MHz) and lower (328 MHz) frequencies at the −6 dB level of the center frequency. As a result of image analysis using the resolution chart, the resolution was about 1 μm. |
format |
article |
author |
Dong-Chan Kang Jeong-Nyeon Kim Ik-Keun Park |
author_facet |
Dong-Chan Kang Jeong-Nyeon Kim Ik-Keun Park |
author_sort |
Dong-Chan Kang |
title |
Development of a High-Resolution Acoustic Sensor Based on ZnO Film Deposited by the RF Magnetron Sputtering Method |
title_short |
Development of a High-Resolution Acoustic Sensor Based on ZnO Film Deposited by the RF Magnetron Sputtering Method |
title_full |
Development of a High-Resolution Acoustic Sensor Based on ZnO Film Deposited by the RF Magnetron Sputtering Method |
title_fullStr |
Development of a High-Resolution Acoustic Sensor Based on ZnO Film Deposited by the RF Magnetron Sputtering Method |
title_full_unstemmed |
Development of a High-Resolution Acoustic Sensor Based on ZnO Film Deposited by the RF Magnetron Sputtering Method |
title_sort |
development of a high-resolution acoustic sensor based on zno film deposited by the rf magnetron sputtering method |
publisher |
MDPI AG |
publishDate |
2021 |
url |
https://doaj.org/article/570c69667d414eb28aca04165f8dd1d6 |
work_keys_str_mv |
AT dongchankang developmentofahighresolutionacousticsensorbasedonznofilmdepositedbytherfmagnetronsputteringmethod AT jeongnyeonkim developmentofahighresolutionacousticsensorbasedonznofilmdepositedbytherfmagnetronsputteringmethod AT ikkeunpark developmentofahighresolutionacousticsensorbasedonznofilmdepositedbytherfmagnetronsputteringmethod |
_version_ |
1718411438070956032 |