Development of a High-Resolution Acoustic Sensor Based on ZnO Film Deposited by the RF Magnetron Sputtering Method

In the study, an acoustic sensor for a high-resolution acoustic microscope was fabricated using zinc oxide (ZnO) piezoelectric ceramics. The c-cut sapphire was processed into a lens shape to deposit a ZnO film using radio frequency (RF) magnetron sputtering, and an upper and a lower electrode were d...

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Autores principales: Dong-Chan Kang, Jeong-Nyeon Kim, Ik-Keun Park
Formato: article
Lenguaje:EN
Publicado: MDPI AG 2021
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spelling oai:doaj.org-article:570c69667d414eb28aca04165f8dd1d62021-11-25T18:14:17ZDevelopment of a High-Resolution Acoustic Sensor Based on ZnO Film Deposited by the RF Magnetron Sputtering Method10.3390/ma142268701996-1944https://doaj.org/article/570c69667d414eb28aca04165f8dd1d62021-11-01T00:00:00Zhttps://www.mdpi.com/1996-1944/14/22/6870https://doaj.org/toc/1996-1944In the study, an acoustic sensor for a high-resolution acoustic microscope was fabricated using zinc oxide (ZnO) piezoelectric ceramics. The c-cut sapphire was processed into a lens shape to deposit a ZnO film using radio frequency (RF) magnetron sputtering, and an upper and a lower electrode were deposited using E-beam evaporation. The electrode was a Au thin film, and a Ti thin film was used as an adhesion layer. The surface microstructure of the ZnO film was observed using a scanning electron microscope (SEM), the thickness of the film was measured using a focused ion beam (FIB) for piezoelectric ceramics deposited on the sapphire wafer, and the thickness of ZnO was measured to be 4.87 μm. As a result of analyzing the crystal growth plane using X-ray diffraction (XRD) analysis, it was confirmed that the piezoelectric characteristics were grown to the (0002) plane. The sensor fabricated in this study had a center frequency of 352 MHz. The bandwidth indicates the range of upper (375 MHz) and lower (328 MHz) frequencies at the −6 dB level of the center frequency. As a result of image analysis using the resolution chart, the resolution was about 1 μm.Dong-Chan KangJeong-Nyeon KimIk-Keun ParkMDPI AGarticlehigh-resolution scanning acoustic microscope (HR-SAM)zinc oxide filmpiezoelectric ceramicsacoustic sensorTechnologyTElectrical engineering. Electronics. Nuclear engineeringTK1-9971Engineering (General). Civil engineering (General)TA1-2040MicroscopyQH201-278.5Descriptive and experimental mechanicsQC120-168.85ENMaterials, Vol 14, Iss 6870, p 6870 (2021)
institution DOAJ
collection DOAJ
language EN
topic high-resolution scanning acoustic microscope (HR-SAM)
zinc oxide film
piezoelectric ceramics
acoustic sensor
Technology
T
Electrical engineering. Electronics. Nuclear engineering
TK1-9971
Engineering (General). Civil engineering (General)
TA1-2040
Microscopy
QH201-278.5
Descriptive and experimental mechanics
QC120-168.85
spellingShingle high-resolution scanning acoustic microscope (HR-SAM)
zinc oxide film
piezoelectric ceramics
acoustic sensor
Technology
T
Electrical engineering. Electronics. Nuclear engineering
TK1-9971
Engineering (General). Civil engineering (General)
TA1-2040
Microscopy
QH201-278.5
Descriptive and experimental mechanics
QC120-168.85
Dong-Chan Kang
Jeong-Nyeon Kim
Ik-Keun Park
Development of a High-Resolution Acoustic Sensor Based on ZnO Film Deposited by the RF Magnetron Sputtering Method
description In the study, an acoustic sensor for a high-resolution acoustic microscope was fabricated using zinc oxide (ZnO) piezoelectric ceramics. The c-cut sapphire was processed into a lens shape to deposit a ZnO film using radio frequency (RF) magnetron sputtering, and an upper and a lower electrode were deposited using E-beam evaporation. The electrode was a Au thin film, and a Ti thin film was used as an adhesion layer. The surface microstructure of the ZnO film was observed using a scanning electron microscope (SEM), the thickness of the film was measured using a focused ion beam (FIB) for piezoelectric ceramics deposited on the sapphire wafer, and the thickness of ZnO was measured to be 4.87 μm. As a result of analyzing the crystal growth plane using X-ray diffraction (XRD) analysis, it was confirmed that the piezoelectric characteristics were grown to the (0002) plane. The sensor fabricated in this study had a center frequency of 352 MHz. The bandwidth indicates the range of upper (375 MHz) and lower (328 MHz) frequencies at the −6 dB level of the center frequency. As a result of image analysis using the resolution chart, the resolution was about 1 μm.
format article
author Dong-Chan Kang
Jeong-Nyeon Kim
Ik-Keun Park
author_facet Dong-Chan Kang
Jeong-Nyeon Kim
Ik-Keun Park
author_sort Dong-Chan Kang
title Development of a High-Resolution Acoustic Sensor Based on ZnO Film Deposited by the RF Magnetron Sputtering Method
title_short Development of a High-Resolution Acoustic Sensor Based on ZnO Film Deposited by the RF Magnetron Sputtering Method
title_full Development of a High-Resolution Acoustic Sensor Based on ZnO Film Deposited by the RF Magnetron Sputtering Method
title_fullStr Development of a High-Resolution Acoustic Sensor Based on ZnO Film Deposited by the RF Magnetron Sputtering Method
title_full_unstemmed Development of a High-Resolution Acoustic Sensor Based on ZnO Film Deposited by the RF Magnetron Sputtering Method
title_sort development of a high-resolution acoustic sensor based on zno film deposited by the rf magnetron sputtering method
publisher MDPI AG
publishDate 2021
url https://doaj.org/article/570c69667d414eb28aca04165f8dd1d6
work_keys_str_mv AT dongchankang developmentofahighresolutionacousticsensorbasedonznofilmdepositedbytherfmagnetronsputteringmethod
AT jeongnyeonkim developmentofahighresolutionacousticsensorbasedonznofilmdepositedbytherfmagnetronsputteringmethod
AT ikkeunpark developmentofahighresolutionacousticsensorbasedonznofilmdepositedbytherfmagnetronsputteringmethod
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