Uprooting defects to enable high-performance III–V optoelectronic devices on silicon

The use of promising group III-V materials for optoelectronic applications is hindered by the high density of threading dislocations when integrated with silicon technology. Here, the authors present an electrochemical deep etching strategy to drastically reduce the the defect density.

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Autores principales:	Youcef A. Bioud, Abderraouf Boucherif, Maksym Myronov, Ali Soltani, Gilles Patriarche, Nadi Braidy, Mourad Jellite, Dominique Drouin, Richard Arès
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2019
Materias:	Science Q
Acceso en línea:	https://doaj.org/article/57278417d6d941dab4b3cabca1cba26b
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spelling	oai:doaj.org-article:57278417d6d941dab4b3cabca1cba26b2021-12-02T17:33:11ZUprooting defects to enable high-performance III–V optoelectronic devices on silicon10.1038/s41467-019-12353-92041-1723https://doaj.org/article/57278417d6d941dab4b3cabca1cba26b2019-09-01T00:00:00Zhttps://doi.org/10.1038/s41467-019-12353-9https://doaj.org/toc/2041-1723The use of promising group III-V materials for optoelectronic applications is hindered by the high density of threading dislocations when integrated with silicon technology. Here, the authors present an electrochemical deep etching strategy to drastically reduce the the defect density.Youcef A. BioudAbderraouf BoucherifMaksym MyronovAli SoltaniGilles PatriarcheNadi BraidyMourad JelliteDominique DrouinRichard ArèsNature PortfolioarticleScienceQENNature Communications, Vol 10, Iss 1, Pp 1-12 (2019)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q Youcef A. Bioud Abderraouf Boucherif Maksym Myronov Ali Soltani Gilles Patriarche Nadi Braidy Mourad Jellite Dominique Drouin Richard Arès Uprooting defects to enable high-performance III–V optoelectronic devices on silicon
description	The use of promising group III-V materials for optoelectronic applications is hindered by the high density of threading dislocations when integrated with silicon technology. Here, the authors present an electrochemical deep etching strategy to drastically reduce the the defect density.
format	article
author	Youcef A. Bioud Abderraouf Boucherif Maksym Myronov Ali Soltani Gilles Patriarche Nadi Braidy Mourad Jellite Dominique Drouin Richard Arès
author_facet	Youcef A. Bioud Abderraouf Boucherif Maksym Myronov Ali Soltani Gilles Patriarche Nadi Braidy Mourad Jellite Dominique Drouin Richard Arès
author_sort	Youcef A. Bioud
title	Uprooting defects to enable high-performance III–V optoelectronic devices on silicon
title_short	Uprooting defects to enable high-performance III–V optoelectronic devices on silicon
title_full	Uprooting defects to enable high-performance III–V optoelectronic devices on silicon
title_fullStr	Uprooting defects to enable high-performance III–V optoelectronic devices on silicon
title_full_unstemmed	Uprooting defects to enable high-performance III–V optoelectronic devices on silicon
title_sort	uprooting defects to enable high-performance iii–v optoelectronic devices on silicon
publisher	Nature Portfolio
publishDate	2019
url	https://doaj.org/article/57278417d6d941dab4b3cabca1cba26b
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Uprooting defects to enable high-performance III–V optoelectronic devices on silicon

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