Effects of Crystallinity on the Electrical Characteristics of Counter-Doped Polycrystalline Germanium Thin-Film Transistor via Continuous-Wave Laser Crystallization
The crystallinity of polycrystalline germanium (poly-Ge) films were demonstrated through continuous-wave laser crystallization (CLC) with Gaussian-distribution beam profile. The different grain sizes of CLC poly-Ge were observed in their three crystallization regions, which were 2 <inline-formula...
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| Autores principales: | , , , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
IEEE
2019
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/57dd7eb462054763a839826621149d77 |
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