Effects of Crystallinity on the Electrical Characteristics of Counter-Doped Polycrystalline Germanium Thin-Film Transistor via Continuous-Wave Laser Crystallization

The crystallinity of polycrystalline germanium (poly-Ge) films were demonstrated through continuous-wave laser crystallization (CLC) with Gaussian-distribution beam profile. The different grain sizes of CLC poly-Ge were observed in their three crystallization regions, which were 2 <inline-formula...

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Autores principales:	Yi-Shao Li, Chun-Yi Wu, Chan-Yu Liao, Jun-Dao Luo, Kai-Chi Chuang, Wei-Shuo Li, Huang-Chung Cheng
Formato:	article
Lenguaje:	EN
Publicado:	IEEE 2019
Materias:	Polycrystalline germanium (poly-Ge) continuous-wave laser crystallization (CLC) counter-doping (CD) thin-film transistor (TFT) Electrical engineering. Electronics. Nuclear engineering TK1-9971
Acceso en línea:	https://doaj.org/article/57dd7eb462054763a839826621149d77
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spelling	oai:doaj.org-article:57dd7eb462054763a839826621149d772021-11-19T00:00:52ZEffects of Crystallinity on the Electrical Characteristics of Counter-Doped Polycrystalline Germanium Thin-Film Transistor via Continuous-Wave Laser Crystallization2168-673410.1109/JEDS.2019.2914831https://doaj.org/article/57dd7eb462054763a839826621149d772019-01-01T00:00:00Zhttps://ieeexplore.ieee.org/document/8705397/https://doaj.org/toc/2168-6734The crystallinity of polycrystalline germanium (poly-Ge) films were demonstrated through continuous-wave laser crystallization (CLC) with Gaussian-distribution beam profile. The different grain sizes of CLC poly-Ge were observed in their three crystallization regions, which were 2 <inline-formula> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula>, 680 nm, and 90 nm for the central, transition, and edge regions, respectively. Furthermore, the relation between crystallinity and carrier types in these three regions of counter-doped CLC poly-Ge films were investigated. In the central and transition regions, the CLC poly-Ge films with relatively low hole concentration were easily converted to n-type poly-Ge films through a counter-doping process. In contrast, the edge region with poor crystallinity exhibited p-type behavior due to high defect-generated hole concentration. According to these material properties of counter-doped CLC poly-Ge films, the corresponding transfer characteristics of p-channel poly-Ge thin-film transistor for three crystallization regions were further investigated. Subsequently, high-performance p-channel poly-Ge thin-film transistors in the central region exhibited a superior field-effect mobility of 792.2 cm<sup>2</sup>/V-s.Yi-Shao LiChun-Yi WuChan-Yu LiaoJun-Dao LuoKai-Chi ChuangWei-Shuo LiHuang-Chung ChengIEEEarticlePolycrystalline germanium (poly-Ge)continuous-wave laser crystallization (CLC)counter-doping (CD)thin-film transistor (TFT)Electrical engineering. Electronics. Nuclear engineeringTK1-9971ENIEEE Journal of the Electron Devices Society, Vol 7, Pp 544-550 (2019)
institution	DOAJ
collection	DOAJ
language	EN
topic	Polycrystalline germanium (poly-Ge) continuous-wave laser crystallization (CLC) counter-doping (CD) thin-film transistor (TFT) Electrical engineering. Electronics. Nuclear engineering TK1-9971
spellingShingle	Polycrystalline germanium (poly-Ge) continuous-wave laser crystallization (CLC) counter-doping (CD) thin-film transistor (TFT) Electrical engineering. Electronics. Nuclear engineering TK1-9971 Yi-Shao Li Chun-Yi Wu Chan-Yu Liao Jun-Dao Luo Kai-Chi Chuang Wei-Shuo Li Huang-Chung Cheng Effects of Crystallinity on the Electrical Characteristics of Counter-Doped Polycrystalline Germanium Thin-Film Transistor via Continuous-Wave Laser Crystallization
description	The crystallinity of polycrystalline germanium (poly-Ge) films were demonstrated through continuous-wave laser crystallization (CLC) with Gaussian-distribution beam profile. The different grain sizes of CLC poly-Ge were observed in their three crystallization regions, which were 2 <inline-formula> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula>, 680 nm, and 90 nm for the central, transition, and edge regions, respectively. Furthermore, the relation between crystallinity and carrier types in these three regions of counter-doped CLC poly-Ge films were investigated. In the central and transition regions, the CLC poly-Ge films with relatively low hole concentration were easily converted to n-type poly-Ge films through a counter-doping process. In contrast, the edge region with poor crystallinity exhibited p-type behavior due to high defect-generated hole concentration. According to these material properties of counter-doped CLC poly-Ge films, the corresponding transfer characteristics of p-channel poly-Ge thin-film transistor for three crystallization regions were further investigated. Subsequently, high-performance p-channel poly-Ge thin-film transistors in the central region exhibited a superior field-effect mobility of 792.2 cm<sup>2</sup>/V-s.
format	article
author	Yi-Shao Li Chun-Yi Wu Chan-Yu Liao Jun-Dao Luo Kai-Chi Chuang Wei-Shuo Li Huang-Chung Cheng
author_facet	Yi-Shao Li Chun-Yi Wu Chan-Yu Liao Jun-Dao Luo Kai-Chi Chuang Wei-Shuo Li Huang-Chung Cheng
author_sort	Yi-Shao Li
title	Effects of Crystallinity on the Electrical Characteristics of Counter-Doped Polycrystalline Germanium Thin-Film Transistor via Continuous-Wave Laser Crystallization
title_short	Effects of Crystallinity on the Electrical Characteristics of Counter-Doped Polycrystalline Germanium Thin-Film Transistor via Continuous-Wave Laser Crystallization
title_full	Effects of Crystallinity on the Electrical Characteristics of Counter-Doped Polycrystalline Germanium Thin-Film Transistor via Continuous-Wave Laser Crystallization
title_fullStr	Effects of Crystallinity on the Electrical Characteristics of Counter-Doped Polycrystalline Germanium Thin-Film Transistor via Continuous-Wave Laser Crystallization
title_full_unstemmed	Effects of Crystallinity on the Electrical Characteristics of Counter-Doped Polycrystalline Germanium Thin-Film Transistor via Continuous-Wave Laser Crystallization
title_sort	effects of crystallinity on the electrical characteristics of counter-doped polycrystalline germanium thin-film transistor via continuous-wave laser crystallization
publisher	IEEE
publishDate	2019
url	https://doaj.org/article/57dd7eb462054763a839826621149d77
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Effects of Crystallinity on the Electrical Characteristics of Counter-Doped Polycrystalline Germanium Thin-Film Transistor via Continuous-Wave Laser Crystallization

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