A study of dopant incorporation in Te-doped GaAsSb nanowires using a combination of XPS/UPS, and C-AFM/SKPM

Abstract We report the first study on doping assessment in Te-doped GaAsSb nanowires (NWs) with variation in Gallium Telluride (GaTe) cell temperature, using X-ray photoelectron spectroscopy (XPS), ultraviolet photoelectron spectroscopy (UPS), conductive-atomic force microscopy (C-AFM), and scanning...

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Auteurs principaux: Priyanka Ramaswamy, Shisir Devkota, Rabin Pokharel, Surya Nalamati, Fred Stevie, Keith Jones, Lew Reynolds, Shanthi Iyer
Format: article
Langue:EN
Publié: Nature Portfolio 2021
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Accès en ligne:https://doaj.org/article/588911d201ed4ed5bbdbf5b16547683e
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