A study of dopant incorporation in Te-doped GaAsSb nanowires using a combination of XPS/UPS, and C-AFM/SKPM

Abstract We report the first study on doping assessment in Te-doped GaAsSb nanowires (NWs) with variation in Gallium Telluride (GaTe) cell temperature, using X-ray photoelectron spectroscopy (XPS), ultraviolet photoelectron spectroscopy (UPS), conductive-atomic force microscopy (C-AFM), and scanning...

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Autores principales:	Priyanka Ramaswamy, Shisir Devkota, Rabin Pokharel, Surya Nalamati, Fred Stevie, Keith Jones, Lew Reynolds, Shanthi Iyer
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/588911d201ed4ed5bbdbf5b16547683e
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spelling	oai:doaj.org-article:588911d201ed4ed5bbdbf5b16547683e2021-12-02T14:30:33ZA study of dopant incorporation in Te-doped GaAsSb nanowires using a combination of XPS/UPS, and C-AFM/SKPM10.1038/s41598-021-87825-42045-2322https://doaj.org/article/588911d201ed4ed5bbdbf5b16547683e2021-04-01T00:00:00Zhttps://doi.org/10.1038/s41598-021-87825-4https://doaj.org/toc/2045-2322Abstract We report the first study on doping assessment in Te-doped GaAsSb nanowires (NWs) with variation in Gallium Telluride (GaTe) cell temperature, using X-ray photoelectron spectroscopy (XPS), ultraviolet photoelectron spectroscopy (UPS), conductive-atomic force microscopy (C-AFM), and scanning Kelvin probe microscopy (SKPM). The NWs were grown using Ga-assisted molecular beam epitaxy with a GaTe captive source as the dopant cell. Te-incorporation in the NWs was associated with a positive shift in the binding energy of the 3d shells of the core constituent elements in doped NWs in the XPS spectra, a lowering of the work function in doped NWs relative to undoped ones from UPS spectra, a significantly higher photoresponse in C-AFM and an increase in surface potential of doped NWs observed in SKPM relative to undoped ones. The carrier concentration of Te-doped GaAsSb NWs determined from UPS spectra are found to be consistent with the values obtained from simulated I–V characteristics. Thus, these surface analytical tools, XPS/UPS and C-AFM/SKPM, that do not require any sample preparation are found to be powerful characterization techniques to analyze the dopant incorporation and carrier density in homogeneously doped NWs.Priyanka RamaswamyShisir DevkotaRabin PokharelSurya NalamatiFred StevieKeith JonesLew ReynoldsShanthi IyerNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 11, Iss 1, Pp 1-14 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Priyanka Ramaswamy Shisir Devkota Rabin Pokharel Surya Nalamati Fred Stevie Keith Jones Lew Reynolds Shanthi Iyer A study of dopant incorporation in Te-doped GaAsSb nanowires using a combination of XPS/UPS, and C-AFM/SKPM
description	Abstract We report the first study on doping assessment in Te-doped GaAsSb nanowires (NWs) with variation in Gallium Telluride (GaTe) cell temperature, using X-ray photoelectron spectroscopy (XPS), ultraviolet photoelectron spectroscopy (UPS), conductive-atomic force microscopy (C-AFM), and scanning Kelvin probe microscopy (SKPM). The NWs were grown using Ga-assisted molecular beam epitaxy with a GaTe captive source as the dopant cell. Te-incorporation in the NWs was associated with a positive shift in the binding energy of the 3d shells of the core constituent elements in doped NWs in the XPS spectra, a lowering of the work function in doped NWs relative to undoped ones from UPS spectra, a significantly higher photoresponse in C-AFM and an increase in surface potential of doped NWs observed in SKPM relative to undoped ones. The carrier concentration of Te-doped GaAsSb NWs determined from UPS spectra are found to be consistent with the values obtained from simulated I–V characteristics. Thus, these surface analytical tools, XPS/UPS and C-AFM/SKPM, that do not require any sample preparation are found to be powerful characterization techniques to analyze the dopant incorporation and carrier density in homogeneously doped NWs.
format	article
author	Priyanka Ramaswamy Shisir Devkota Rabin Pokharel Surya Nalamati Fred Stevie Keith Jones Lew Reynolds Shanthi Iyer
author_facet	Priyanka Ramaswamy Shisir Devkota Rabin Pokharel Surya Nalamati Fred Stevie Keith Jones Lew Reynolds Shanthi Iyer
author_sort	Priyanka Ramaswamy
title	A study of dopant incorporation in Te-doped GaAsSb nanowires using a combination of XPS/UPS, and C-AFM/SKPM
title_short	A study of dopant incorporation in Te-doped GaAsSb nanowires using a combination of XPS/UPS, and C-AFM/SKPM
title_full	A study of dopant incorporation in Te-doped GaAsSb nanowires using a combination of XPS/UPS, and C-AFM/SKPM
title_fullStr	A study of dopant incorporation in Te-doped GaAsSb nanowires using a combination of XPS/UPS, and C-AFM/SKPM
title_full_unstemmed	A study of dopant incorporation in Te-doped GaAsSb nanowires using a combination of XPS/UPS, and C-AFM/SKPM
title_sort	study of dopant incorporation in te-doped gaassb nanowires using a combination of xps/ups, and c-afm/skpm
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/588911d201ed4ed5bbdbf5b16547683e
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A study of dopant incorporation in Te-doped GaAsSb nanowires using a combination of XPS/UPS, and C-AFM/SKPM

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