M-Center in Neutron-Irradiated 4H-SiC
We report on the metastable defects introduced in the n-type 4H-SiC material by epithermal and fast neutron irradiation. The epithermal and fast neutron irradiation defects in 4H-SiC are much less explored compared to electron or proton irradiation-induced defects. In addition to the carbon vacancy...
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| Main Authors: | , , , , |
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| Format: | article |
| Language: | EN |
| Published: |
MDPI AG
2021
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| Subjects: | |
| Online Access: | https://doaj.org/article/58c3fc5d3b4f461f99a536a07e3b2f74 |
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| Summary: | We report on the metastable defects introduced in the n-type 4H-SiC material by epithermal and fast neutron irradiation. The epithermal and fast neutron irradiation defects in 4H-SiC are much less explored compared to electron or proton irradiation-induced defects. In addition to the carbon vacancy (Vc), silicon vacancy (Vsi) and carbon antisite-carbon vacancy (CAV) complex, the neutron irradiation has introduced four deep-level defects, all arising from the metastable defect, the M-center. The metastable deep-level defects were investigated by deep level transient spectroscopy (DLTS), high-resolution Laplace DLTS (L-DLTS) and isothermal DLTS. The existence of the fourth deep-level defect, M<sub>4</sub>, recently observed in ion-implanted 4H-SiC, has been additionally confirmed in neutron-irradiated samples. The isothermal DLTS technique has been proven as a useful tool for studying the metastable defects. |
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