M-Center in Neutron-Irradiated 4H-SiC
We report on the metastable defects introduced in the n-type 4H-SiC material by epithermal and fast neutron irradiation. The epithermal and fast neutron irradiation defects in 4H-SiC are much less explored compared to electron or proton irradiation-induced defects. In addition to the carbon vacancy...
Saved in:
Main Authors: | Ivana Capan, Tomislav Brodar, Takahiro Makino, Vladimir Radulovic, Luka Snoj |
---|---|
Format: | article |
Language: | EN |
Published: |
MDPI AG
2021
|
Subjects: | |
Online Access: | https://doaj.org/article/58c3fc5d3b4f461f99a536a07e3b2f74 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
Finite Element Modeling of Brittle and Ductile Modes in Cutting of 3C-SiC
by: Masud Alam, et al.
Published: (2021) -
Fabrication of C/C–SiC–ZrB<sub>2</sub> Ultra-High Temperature Composites through Liquid–Solid Chemical Reaction
by: Qian Sun, et al.
Published: (2021) -
Effect of Impurities Control on the Crystallization and Densification of Polymer-Derived SiC Fibers
by: Young-jun Joo, et al.
Published: (2021) -
Performance and Applications of Silicon Carbide Neutron Detectors in Harsh Nuclear Environments
by: Ruddy Frank H., et al.
Published: (2021) -
Asymmetric Split-Gate 4H-SiC MOSFET with Embedded Schottky Barrier Diode for High-Frequency Applications
by: Kyuhyun Cha, et al.
Published: (2021)