Giant Seebeck effect across the field-induced metal-insulator transition of InAs
Abstract Lightly doped III–V semiconductor InAs is a dilute metal, which can be pushed beyond its extreme quantum limit upon the application of a modest magnetic field. In this regime, a Mott-Anderson metal–insulator transition, triggered by the magnetic field, leads to a depletion of carrier concen...
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| Autores principales: | , , , , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
Nature Portfolio
2020
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/5a18d7ae74a14aeab76deba7e45838a9 |
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