Giant Seebeck effect across the field-induced metal-insulator transition of InAs

Abstract Lightly doped III–V semiconductor InAs is a dilute metal, which can be pushed beyond its extreme quantum limit upon the application of a modest magnetic field. In this regime, a Mott-Anderson metal–insulator transition, triggered by the magnetic field, leads to a depletion of carrier concen...

Descripción completa

Guardado en:

Detalles Bibliográficos
Autores principales:	Alexandre Jaoui, Gabriel Seyfarth, Carl Willem Rischau, Steffen Wiedmann, Siham Benhabib, Cyril Proust, Kamran Behnia, Benoît Fauqué
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2020
Materias:	Materials of engineering and construction. Mechanics of materials TA401-492 Atomic physics. Constitution and properties of matter QC170-197
Acceso en línea:	https://doaj.org/article/5a18d7ae74a14aeab76deba7e45838a9
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

id	oai:doaj.org-article:5a18d7ae74a14aeab76deba7e45838a9
record_format	dspace
spelling	oai:doaj.org-article:5a18d7ae74a14aeab76deba7e45838a92021-12-02T13:42:07ZGiant Seebeck effect across the field-induced metal-insulator transition of InAs10.1038/s41535-020-00296-02397-4648https://doaj.org/article/5a18d7ae74a14aeab76deba7e45838a92020-12-01T00:00:00Zhttps://doi.org/10.1038/s41535-020-00296-0https://doaj.org/toc/2397-4648Abstract Lightly doped III–V semiconductor InAs is a dilute metal, which can be pushed beyond its extreme quantum limit upon the application of a modest magnetic field. In this regime, a Mott-Anderson metal–insulator transition, triggered by the magnetic field, leads to a depletion of carrier concentration by more than one order of magnitude. Here, we show that this transition is accompanied by a 200-fold enhancement of the Seebeck coefficient, which becomes as large as 11.3 mV K−1 $$\approx 130\frac{{k}_{B}}{e}$$ ≈ 130 k B e at T = 8 K and B = 29 T. We find that the magnitude of this signal depends on sample dimensions and conclude that it is caused by phonon drag, resulting from a large difference between the scattering time of phonons (which are almost ballistic) and electrons (which are almost localized in the insulating state). Our results reveal a path to distinguish between possible sources of large thermoelectric response in other low-density systems pushed beyond the quantum limit.Alexandre JaouiGabriel SeyfarthCarl Willem RischauSteffen WiedmannSiham BenhabibCyril ProustKamran BehniaBenoît FauquéNature PortfolioarticleMaterials of engineering and construction. Mechanics of materialsTA401-492Atomic physics. Constitution and properties of matterQC170-197ENnpj Quantum Materials, Vol 5, Iss 1, Pp 1-6 (2020)
institution	DOAJ
collection	DOAJ
language	EN
topic	Materials of engineering and construction. Mechanics of materials TA401-492 Atomic physics. Constitution and properties of matter QC170-197
spellingShingle	Materials of engineering and construction. Mechanics of materials TA401-492 Atomic physics. Constitution and properties of matter QC170-197 Alexandre Jaoui Gabriel Seyfarth Carl Willem Rischau Steffen Wiedmann Siham Benhabib Cyril Proust Kamran Behnia Benoît Fauqué Giant Seebeck effect across the field-induced metal-insulator transition of InAs
description	Abstract Lightly doped III–V semiconductor InAs is a dilute metal, which can be pushed beyond its extreme quantum limit upon the application of a modest magnetic field. In this regime, a Mott-Anderson metal–insulator transition, triggered by the magnetic field, leads to a depletion of carrier concentration by more than one order of magnitude. Here, we show that this transition is accompanied by a 200-fold enhancement of the Seebeck coefficient, which becomes as large as 11.3 mV K−1 $$\approx 130\frac{{k}_{B}}{e}$$ ≈ 130 k B e at T = 8 K and B = 29 T. We find that the magnitude of this signal depends on sample dimensions and conclude that it is caused by phonon drag, resulting from a large difference between the scattering time of phonons (which are almost ballistic) and electrons (which are almost localized in the insulating state). Our results reveal a path to distinguish between possible sources of large thermoelectric response in other low-density systems pushed beyond the quantum limit.
format	article
author	Alexandre Jaoui Gabriel Seyfarth Carl Willem Rischau Steffen Wiedmann Siham Benhabib Cyril Proust Kamran Behnia Benoît Fauqué
author_facet	Alexandre Jaoui Gabriel Seyfarth Carl Willem Rischau Steffen Wiedmann Siham Benhabib Cyril Proust Kamran Behnia Benoît Fauqué
author_sort	Alexandre Jaoui
title	Giant Seebeck effect across the field-induced metal-insulator transition of InAs
title_short	Giant Seebeck effect across the field-induced metal-insulator transition of InAs
title_full	Giant Seebeck effect across the field-induced metal-insulator transition of InAs
title_fullStr	Giant Seebeck effect across the field-induced metal-insulator transition of InAs
title_full_unstemmed	Giant Seebeck effect across the field-induced metal-insulator transition of InAs
title_sort	giant seebeck effect across the field-induced metal-insulator transition of inas
publisher	Nature Portfolio
publishDate	2020
url	https://doaj.org/article/5a18d7ae74a14aeab76deba7e45838a9
work_keys_str_mv	AT alexandrejaoui giantseebeckeffectacrossthefieldinducedmetalinsulatortransitionofinas AT gabrielseyfarth giantseebeckeffectacrossthefieldinducedmetalinsulatortransitionofinas AT carlwillemrischau giantseebeckeffectacrossthefieldinducedmetalinsulatortransitionofinas AT steffenwiedmann giantseebeckeffectacrossthefieldinducedmetalinsulatortransitionofinas AT sihambenhabib giantseebeckeffectacrossthefieldinducedmetalinsulatortransitionofinas AT cyrilproust giantseebeckeffectacrossthefieldinducedmetalinsulatortransitionofinas AT kamranbehnia giantseebeckeffectacrossthefieldinducedmetalinsulatortransitionofinas AT benoitfauque giantseebeckeffectacrossthefieldinducedmetalinsulatortransitionofinas
_version_	1718392555345805312

Giant Seebeck effect across the field-induced metal-insulator transition of InAs

Ejemplares similares