Ultrathin Sub-5-nm Hf₁₋<italic>ₓ</italic>Zr<italic>ₓ</italic>O₂ for a Stacked Gate-all-Around Nanowire Ferroelectric FET With Internal Metal Gate
This study investigates a device’s ability to boost its on-state current and subthreshold behavior using a ferroelectric field-effect transistor (FeFET) with an ultrathin sub-5-nm Hf<sub>1-<italic>x</italic></sub>Zr<italic>x</italic>O2 (HZO). A conventi...
Enregistré dans:
| Auteurs principaux: | , , , , |
|---|---|
| Format: | article |
| Langue: | EN |
| Publié: |
IEEE
2021
|
| Sujets: | |
| Accès en ligne: | https://doaj.org/article/5ac82faab6e2474280122c96baced3f7 |
| Tags: |
Ajouter un tag
Pas de tags, Soyez le premier à ajouter un tag!
|