Ultrathin Sub-5-nm Hf₁₋<italic>ₓ</italic>Zr<italic>ₓ</italic>O₂ for a Stacked Gate-all-Around Nanowire Ferroelectric FET With Internal Metal Gate
This study investigates a device’s ability to boost its on-state current and subthreshold behavior using a ferroelectric field-effect transistor (FeFET) with an ultrathin sub-5-nm Hf<sub>1-<italic>x</italic></sub>Zr<italic>x</italic>O2 (HZO). A conventi...
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| Main Authors: | , , , , |
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| Format: | article |
| Language: | EN |
| Published: |
IEEE
2021
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| Subjects: | |
| Online Access: | https://doaj.org/article/5ac82faab6e2474280122c96baced3f7 |
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