Ultraviolet GaN Light-Emitting Diodes with Porous-AlGaN Reflectors

Abstract A GaN/AlGaN ultraviolet light emitting diode (UV-LED) structure with a porous AlGaN reflector structure has been demonstrated. Inside the UV-LED, the n+-AlGaN/undoped-AlGaN stack structure was transformed into a porous-AlGaN/undoped-AlGaN stack structure through a doping-selective electroch...

Descripción completa

Guardado en:
Detalles Bibliográficos
Autores principales: Feng-Hsu Fan, Zun-Yao Syu, Chia-Jung Wu, Zhong-Jie Yang, Bo-Song Huang, Guan-Jhong Wang, Yung-Sen Lin, Hsiang Chen, Chyuan Hauer Kao, Chia-Feng Lin
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2017
Materias:
R
Q
Acceso en línea:https://doaj.org/article/5bbc41735b4c41a890eb444cac821859
Etiquetas: Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!