Ultraviolet GaN Light-Emitting Diodes with Porous-AlGaN Reflectors

Abstract A GaN/AlGaN ultraviolet light emitting diode (UV-LED) structure with a porous AlGaN reflector structure has been demonstrated. Inside the UV-LED, the n+-AlGaN/undoped-AlGaN stack structure was transformed into a porous-AlGaN/undoped-AlGaN stack structure through a doping-selective electroch...

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Autores principales:	Feng-Hsu Fan, Zun-Yao Syu, Chia-Jung Wu, Zhong-Jie Yang, Bo-Song Huang, Guan-Jhong Wang, Yung-Sen Lin, Hsiang Chen, Chyuan Hauer Kao, Chia-Feng Lin
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/5bbc41735b4c41a890eb444cac821859
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spelling	oai:doaj.org-article:5bbc41735b4c41a890eb444cac8218592021-12-02T15:05:41ZUltraviolet GaN Light-Emitting Diodes with Porous-AlGaN Reflectors10.1038/s41598-017-05391-02045-2322https://doaj.org/article/5bbc41735b4c41a890eb444cac8218592017-07-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-05391-0https://doaj.org/toc/2045-2322Abstract A GaN/AlGaN ultraviolet light emitting diode (UV-LED) structure with a porous AlGaN reflector structure has been demonstrated. Inside the UV-LED, the n+-AlGaN/undoped-AlGaN stack structure was transformed into a porous-AlGaN/undoped-AlGaN stack structure through a doping-selective electrochemical etching process. The reflectivity of the porous AlGaN reflector was 93% at 374 nm with a stop-bandwidth of 35 nm. In an angle-dependent reflectance measurement, the central wavelength of the porous AlGaN reflector had blueshift phenomenon by increasing light-incident angle from 10° to 50°. A cut-off wavelength was observed at 349 nm due to the material absorption of the porous-AlGaN/u-AlGaN stack structure. In the treated UV-LED structure, the photoluminescence emission wavelength was measured at 362 nm with a 106° divergent angle covered by the porous-AlGaN reflector. The light output power of the treated UV-LED structure was higher than that of the non-treated UV-LED structure due to the high light reflectance on the embedded porous AlGaN reflector.Feng-Hsu FanZun-Yao SyuChia-Jung WuZhong-Jie YangBo-Song HuangGuan-Jhong WangYung-Sen LinHsiang ChenChyuan Hauer KaoChia-Feng LinNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-8 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Feng-Hsu Fan Zun-Yao Syu Chia-Jung Wu Zhong-Jie Yang Bo-Song Huang Guan-Jhong Wang Yung-Sen Lin Hsiang Chen Chyuan Hauer Kao Chia-Feng Lin Ultraviolet GaN Light-Emitting Diodes with Porous-AlGaN Reflectors
description	Abstract A GaN/AlGaN ultraviolet light emitting diode (UV-LED) structure with a porous AlGaN reflector structure has been demonstrated. Inside the UV-LED, the n+-AlGaN/undoped-AlGaN stack structure was transformed into a porous-AlGaN/undoped-AlGaN stack structure through a doping-selective electrochemical etching process. The reflectivity of the porous AlGaN reflector was 93% at 374 nm with a stop-bandwidth of 35 nm. In an angle-dependent reflectance measurement, the central wavelength of the porous AlGaN reflector had blueshift phenomenon by increasing light-incident angle from 10° to 50°. A cut-off wavelength was observed at 349 nm due to the material absorption of the porous-AlGaN/u-AlGaN stack structure. In the treated UV-LED structure, the photoluminescence emission wavelength was measured at 362 nm with a 106° divergent angle covered by the porous-AlGaN reflector. The light output power of the treated UV-LED structure was higher than that of the non-treated UV-LED structure due to the high light reflectance on the embedded porous AlGaN reflector.
format	article
author	Feng-Hsu Fan Zun-Yao Syu Chia-Jung Wu Zhong-Jie Yang Bo-Song Huang Guan-Jhong Wang Yung-Sen Lin Hsiang Chen Chyuan Hauer Kao Chia-Feng Lin
author_facet	Feng-Hsu Fan Zun-Yao Syu Chia-Jung Wu Zhong-Jie Yang Bo-Song Huang Guan-Jhong Wang Yung-Sen Lin Hsiang Chen Chyuan Hauer Kao Chia-Feng Lin
author_sort	Feng-Hsu Fan
title	Ultraviolet GaN Light-Emitting Diodes with Porous-AlGaN Reflectors
title_short	Ultraviolet GaN Light-Emitting Diodes with Porous-AlGaN Reflectors
title_full	Ultraviolet GaN Light-Emitting Diodes with Porous-AlGaN Reflectors
title_fullStr	Ultraviolet GaN Light-Emitting Diodes with Porous-AlGaN Reflectors
title_full_unstemmed	Ultraviolet GaN Light-Emitting Diodes with Porous-AlGaN Reflectors
title_sort	ultraviolet gan light-emitting diodes with porous-algan reflectors
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/5bbc41735b4c41a890eb444cac821859
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Ultraviolet GaN Light-Emitting Diodes with Porous-AlGaN Reflectors

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