Strong and tunable spin–orbit interaction in a single crystalline InSb nanosheet

Abstract A dual-gate InSb nanosheet field-effect device is realized and is used to investigate the physical origin and the controllability of the spin–orbit interaction in a narrow bandgap semiconductor InSb nanosheet. We demonstrate that by applying a voltage over the dual gate, efficiently tuning...

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Autores principales: Yuanjie Chen, Shaoyun Huang, Dong Pan, Jianhong Xue, Li Zhang, Jianhua Zhao, H. Q. Xu
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2021
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Acceso en línea:https://doaj.org/article/5c6140ed6c774240be009b4864af5903
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