Strong and tunable spin–orbit interaction in a single crystalline InSb nanosheet

Abstract A dual-gate InSb nanosheet field-effect device is realized and is used to investigate the physical origin and the controllability of the spin–orbit interaction in a narrow bandgap semiconductor InSb nanosheet. We demonstrate that by applying a voltage over the dual gate, efficiently tuning...

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Autores principales:	Yuanjie Chen, Shaoyun Huang, Dong Pan, Jianhong Xue, Li Zhang, Jianhua Zhao, H. Q. Xu
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Materials of engineering and construction. Mechanics of materials TA401-492 Chemistry QD1-999
Acceso en línea:	https://doaj.org/article/5c6140ed6c774240be009b4864af5903
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spelling	oai:doaj.org-article:5c6140ed6c774240be009b4864af59032021-12-02T13:49:54ZStrong and tunable spin–orbit interaction in a single crystalline InSb nanosheet10.1038/s41699-020-00184-y2397-7132https://doaj.org/article/5c6140ed6c774240be009b4864af59032021-01-01T00:00:00Zhttps://doi.org/10.1038/s41699-020-00184-yhttps://doaj.org/toc/2397-7132Abstract A dual-gate InSb nanosheet field-effect device is realized and is used to investigate the physical origin and the controllability of the spin–orbit interaction in a narrow bandgap semiconductor InSb nanosheet. We demonstrate that by applying a voltage over the dual gate, efficiently tuning of the spin–orbit interaction in the InSb nanosheet can be achieved. We also find the presence of an intrinsic spin–orbit interaction in the InSb nanosheet at zero dual-gate voltage and identify its physical origin as a build-in asymmetry in the device layer structure. Having a strong and controllable spin–orbit interaction in an InSb nanosheet could simplify the design and realization of spintronic deceives, spin-based quantum devices, and topological quantum devices.Yuanjie ChenShaoyun HuangDong PanJianhong XueLi ZhangJianhua ZhaoH. Q. XuNature PortfolioarticleMaterials of engineering and construction. Mechanics of materialsTA401-492ChemistryQD1-999ENnpj 2D Materials and Applications, Vol 5, Iss 1, Pp 1-8 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Materials of engineering and construction. Mechanics of materials TA401-492 Chemistry QD1-999
spellingShingle	Materials of engineering and construction. Mechanics of materials TA401-492 Chemistry QD1-999 Yuanjie Chen Shaoyun Huang Dong Pan Jianhong Xue Li Zhang Jianhua Zhao H. Q. Xu Strong and tunable spin–orbit interaction in a single crystalline InSb nanosheet
description	Abstract A dual-gate InSb nanosheet field-effect device is realized and is used to investigate the physical origin and the controllability of the spin–orbit interaction in a narrow bandgap semiconductor InSb nanosheet. We demonstrate that by applying a voltage over the dual gate, efficiently tuning of the spin–orbit interaction in the InSb nanosheet can be achieved. We also find the presence of an intrinsic spin–orbit interaction in the InSb nanosheet at zero dual-gate voltage and identify its physical origin as a build-in asymmetry in the device layer structure. Having a strong and controllable spin–orbit interaction in an InSb nanosheet could simplify the design and realization of spintronic deceives, spin-based quantum devices, and topological quantum devices.
format	article
author	Yuanjie Chen Shaoyun Huang Dong Pan Jianhong Xue Li Zhang Jianhua Zhao H. Q. Xu
author_facet	Yuanjie Chen Shaoyun Huang Dong Pan Jianhong Xue Li Zhang Jianhua Zhao H. Q. Xu
author_sort	Yuanjie Chen
title	Strong and tunable spin–orbit interaction in a single crystalline InSb nanosheet
title_short	Strong and tunable spin–orbit interaction in a single crystalline InSb nanosheet
title_full	Strong and tunable spin–orbit interaction in a single crystalline InSb nanosheet
title_fullStr	Strong and tunable spin–orbit interaction in a single crystalline InSb nanosheet
title_full_unstemmed	Strong and tunable spin–orbit interaction in a single crystalline InSb nanosheet
title_sort	strong and tunable spin–orbit interaction in a single crystalline insb nanosheet
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/5c6140ed6c774240be009b4864af5903
work_keys_str_mv	AT yuanjiechen strongandtunablespinorbitinteractioninasinglecrystallineinsbnanosheet AT shaoyunhuang strongandtunablespinorbitinteractioninasinglecrystallineinsbnanosheet AT dongpan strongandtunablespinorbitinteractioninasinglecrystallineinsbnanosheet AT jianhongxue strongandtunablespinorbitinteractioninasinglecrystallineinsbnanosheet AT lizhang strongandtunablespinorbitinteractioninasinglecrystallineinsbnanosheet AT jianhuazhao strongandtunablespinorbitinteractioninasinglecrystallineinsbnanosheet AT hqxu strongandtunablespinorbitinteractioninasinglecrystallineinsbnanosheet
_version_	1718392438548070400

Strong and tunable spin–orbit interaction in a single crystalline InSb nanosheet

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