Tunable diameter and spacing of double Ge quantum dots using highly-controllable spacers and selective oxidation of SiGe

Abstract We report the novel tunability of the diameters and spacings of paired Ge double quantum dots (DQDs) using nano-spacer technology in combination with selective oxidation of Si0.85Ge0.15 at high temperature. Pairs of spherical-shaped Ge QDs were formed by the selective oxidation of poly-SiGe...

Descripción completa

Guardado en:
Detalles Bibliográficos
Autores principales: Tsung-Lin Huang, Kang-Ping Peng, Ching-Lun Chen, Horng-Chih Lin, Tom George, Pei-Wen Li
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2019
Materias:
R
Q
Acceso en línea:https://doaj.org/article/5d10d69fe61c4105bcbf2565b8f742dc
Etiquetas: Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!