Tunable diameter and spacing of double Ge quantum dots using highly-controllable spacers and selective oxidation of SiGe

Abstract We report the novel tunability of the diameters and spacings of paired Ge double quantum dots (DQDs) using nano-spacer technology in combination with selective oxidation of Si0.85Ge0.15 at high temperature. Pairs of spherical-shaped Ge QDs were formed by the selective oxidation of poly-SiGe...

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Autores principales:	Tsung-Lin Huang, Kang-Ping Peng, Ching-Lun Chen, Horng-Chih Lin, Tom George, Pei-Wen Li
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2019
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/5d10d69fe61c4105bcbf2565b8f742dc
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spelling	oai:doaj.org-article:5d10d69fe61c4105bcbf2565b8f742dc2021-12-02T15:08:07ZTunable diameter and spacing of double Ge quantum dots using highly-controllable spacers and selective oxidation of SiGe10.1038/s41598-019-47806-02045-2322https://doaj.org/article/5d10d69fe61c4105bcbf2565b8f742dc2019-08-01T00:00:00Zhttps://doi.org/10.1038/s41598-019-47806-0https://doaj.org/toc/2045-2322Abstract We report the novel tunability of the diameters and spacings of paired Ge double quantum dots (DQDs) using nano-spacer technology in combination with selective oxidation of Si0.85Ge0.15 at high temperature. Pairs of spherical-shaped Ge QDs were formed by the selective oxidation of poly-SiGe spacer islands at each sidewall corner of the nano-patterned Si3N4/poly-Si ridges. The diameters of the Ge spherical QDs are essentially determined by geometrical conditions (height, width, and length) of the nano-patterned spacer islands of poly-SiGe, which are tunable by adjusting the process times of deposition and etch back for poly-SiGe spacer layers in combination with the exposure dose of electron-beam lithography. Most importantly, the separations between the Ge DQDs are controllable by adjusting the widths of the poly-Si/Si3N4 ridges and the thermal oxidation times. Our self-organization and self-alignment approach achieved high symmetry within the Ge DQDs in terms of the individual QD diameters as well as the coupling barriers between the QDs and external electrodes in close proximity.Tsung-Lin HuangKang-Ping PengChing-Lun ChenHorng-Chih LinTom GeorgePei-Wen LiNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 9, Iss 1, Pp 1-8 (2019)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Tsung-Lin Huang Kang-Ping Peng Ching-Lun Chen Horng-Chih Lin Tom George Pei-Wen Li Tunable diameter and spacing of double Ge quantum dots using highly-controllable spacers and selective oxidation of SiGe
description	Abstract We report the novel tunability of the diameters and spacings of paired Ge double quantum dots (DQDs) using nano-spacer technology in combination with selective oxidation of Si0.85Ge0.15 at high temperature. Pairs of spherical-shaped Ge QDs were formed by the selective oxidation of poly-SiGe spacer islands at each sidewall corner of the nano-patterned Si3N4/poly-Si ridges. The diameters of the Ge spherical QDs are essentially determined by geometrical conditions (height, width, and length) of the nano-patterned spacer islands of poly-SiGe, which are tunable by adjusting the process times of deposition and etch back for poly-SiGe spacer layers in combination with the exposure dose of electron-beam lithography. Most importantly, the separations between the Ge DQDs are controllable by adjusting the widths of the poly-Si/Si3N4 ridges and the thermal oxidation times. Our self-organization and self-alignment approach achieved high symmetry within the Ge DQDs in terms of the individual QD diameters as well as the coupling barriers between the QDs and external electrodes in close proximity.
format	article
author	Tsung-Lin Huang Kang-Ping Peng Ching-Lun Chen Horng-Chih Lin Tom George Pei-Wen Li
author_facet	Tsung-Lin Huang Kang-Ping Peng Ching-Lun Chen Horng-Chih Lin Tom George Pei-Wen Li
author_sort	Tsung-Lin Huang
title	Tunable diameter and spacing of double Ge quantum dots using highly-controllable spacers and selective oxidation of SiGe
title_short	Tunable diameter and spacing of double Ge quantum dots using highly-controllable spacers and selective oxidation of SiGe
title_full	Tunable diameter and spacing of double Ge quantum dots using highly-controllable spacers and selective oxidation of SiGe
title_fullStr	Tunable diameter and spacing of double Ge quantum dots using highly-controllable spacers and selective oxidation of SiGe
title_full_unstemmed	Tunable diameter and spacing of double Ge quantum dots using highly-controllable spacers and selective oxidation of SiGe
title_sort	tunable diameter and spacing of double ge quantum dots using highly-controllable spacers and selective oxidation of sige
publisher	Nature Portfolio
publishDate	2019
url	https://doaj.org/article/5d10d69fe61c4105bcbf2565b8f742dc
work_keys_str_mv	AT tsunglinhuang tunablediameterandspacingofdoublegequantumdotsusinghighlycontrollablespacersandselectiveoxidationofsige AT kangpingpeng tunablediameterandspacingofdoublegequantumdotsusinghighlycontrollablespacersandselectiveoxidationofsige AT chinglunchen tunablediameterandspacingofdoublegequantumdotsusinghighlycontrollablespacersandselectiveoxidationofsige AT horngchihlin tunablediameterandspacingofdoublegequantumdotsusinghighlycontrollablespacersandselectiveoxidationofsige AT tomgeorge tunablediameterandspacingofdoublegequantumdotsusinghighlycontrollablespacersandselectiveoxidationofsige AT peiwenli tunablediameterandspacingofdoublegequantumdotsusinghighlycontrollablespacersandselectiveoxidationofsige
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Tunable diameter and spacing of double Ge quantum dots using highly-controllable spacers and selective oxidation of SiGe

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