Tunable diameter and spacing of double Ge quantum dots using highly-controllable spacers and selective oxidation of SiGe
Abstract We report the novel tunability of the diameters and spacings of paired Ge double quantum dots (DQDs) using nano-spacer technology in combination with selective oxidation of Si0.85Ge0.15 at high temperature. Pairs of spherical-shaped Ge QDs were formed by the selective oxidation of poly-SiGe...
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Auteurs principaux: | Tsung-Lin Huang, Kang-Ping Peng, Ching-Lun Chen, Horng-Chih Lin, Tom George, Pei-Wen Li |
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Format: | article |
Langue: | EN |
Publié: |
Nature Portfolio
2019
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Accès en ligne: | https://doaj.org/article/5d10d69fe61c4105bcbf2565b8f742dc |
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