Thermodynamic equilibrium theory revealing increased hysteresis in ferroelectric field-effect transistors with free charge accumulation

The ferroelectric field-effect transistor, which has attracted much attention for application as both a highly energy-efficient logic device and a non-volatile memory device, has often been studied within the framework of equilibrium thermodynamics. Here, the authors theoretically demonstrate the im...

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Auteurs principaux: Jasper Bizindavyi, Anne S. Verhulst, Bart Sorée, William G. Vandenberghe
Format: article
Langue:EN
Publié: Nature Portfolio 2021
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Accès en ligne:https://doaj.org/article/5e1bcda7f5bf4432b6d182bb7babf59f
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