Non-equilibrium induction of tin in germanium: towards direct bandgap Ge1−xSnx nanowires
Direct band gap nanostructures compatible with Si-based electronics are actively investigated. Here, Biswas et al. incorporate unusually large amounts of tin in germanium nanowires by non-equilibrium kinetic trapping, and optical characterizations suggest that the nanowires exhibit a direct band gap...
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| Autores principales: | , , , , , , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
Nature Portfolio
2016
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/5e60bb3adf1b4912ad37a844fb038f4b |
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