Non-equilibrium induction of tin in germanium: towards direct bandgap Ge1−xSnx nanowires

Direct band gap nanostructures compatible with Si-based electronics are actively investigated. Here, Biswas et al. incorporate unusually large amounts of tin in germanium nanowires by non-equilibrium kinetic trapping, and optical characterizations suggest that the nanowires exhibit a direct band gap...

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Autores principales: Subhajit Biswas, Jessica Doherty, Dzianis Saladukha, Quentin Ramasse, Dipanwita Majumdar, Moneesh Upmanyu, Achintya Singha, Tomasz Ochalski, Michael A. Morris, Justin D. Holmes
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Lenguaje:EN
Publicado: Nature Portfolio 2016
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Acceso en línea:https://doaj.org/article/5e60bb3adf1b4912ad37a844fb038f4b
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spelling oai:doaj.org-article:5e60bb3adf1b4912ad37a844fb038f4b2021-12-02T15:35:19ZNon-equilibrium induction of tin in germanium: towards direct bandgap Ge1−xSnx nanowires10.1038/ncomms114052041-1723https://doaj.org/article/5e60bb3adf1b4912ad37a844fb038f4b2016-04-01T00:00:00Zhttps://doi.org/10.1038/ncomms11405https://doaj.org/toc/2041-1723Direct band gap nanostructures compatible with Si-based electronics are actively investigated. Here, Biswas et al. incorporate unusually large amounts of tin in germanium nanowires by non-equilibrium kinetic trapping, and optical characterizations suggest that the nanowires exhibit a direct band gap.Subhajit BiswasJessica DohertyDzianis SaladukhaQuentin RamasseDipanwita MajumdarMoneesh UpmanyuAchintya SinghaTomasz OchalskiMichael A. MorrisJustin D. HolmesNature PortfolioarticleScienceQENNature Communications, Vol 7, Iss 1, Pp 1-12 (2016)
institution DOAJ
collection DOAJ
language EN
topic Science
Q
spellingShingle Science
Q
Subhajit Biswas
Jessica Doherty
Dzianis Saladukha
Quentin Ramasse
Dipanwita Majumdar
Moneesh Upmanyu
Achintya Singha
Tomasz Ochalski
Michael A. Morris
Justin D. Holmes
Non-equilibrium induction of tin in germanium: towards direct bandgap Ge1−xSnx nanowires
description Direct band gap nanostructures compatible with Si-based electronics are actively investigated. Here, Biswas et al. incorporate unusually large amounts of tin in germanium nanowires by non-equilibrium kinetic trapping, and optical characterizations suggest that the nanowires exhibit a direct band gap.
format article
author Subhajit Biswas
Jessica Doherty
Dzianis Saladukha
Quentin Ramasse
Dipanwita Majumdar
Moneesh Upmanyu
Achintya Singha
Tomasz Ochalski
Michael A. Morris
Justin D. Holmes
author_facet Subhajit Biswas
Jessica Doherty
Dzianis Saladukha
Quentin Ramasse
Dipanwita Majumdar
Moneesh Upmanyu
Achintya Singha
Tomasz Ochalski
Michael A. Morris
Justin D. Holmes
author_sort Subhajit Biswas
title Non-equilibrium induction of tin in germanium: towards direct bandgap Ge1−xSnx nanowires
title_short Non-equilibrium induction of tin in germanium: towards direct bandgap Ge1−xSnx nanowires
title_full Non-equilibrium induction of tin in germanium: towards direct bandgap Ge1−xSnx nanowires
title_fullStr Non-equilibrium induction of tin in germanium: towards direct bandgap Ge1−xSnx nanowires
title_full_unstemmed Non-equilibrium induction of tin in germanium: towards direct bandgap Ge1−xSnx nanowires
title_sort non-equilibrium induction of tin in germanium: towards direct bandgap ge1−xsnx nanowires
publisher Nature Portfolio
publishDate 2016
url https://doaj.org/article/5e60bb3adf1b4912ad37a844fb038f4b
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