Non-equilibrium induction of tin in germanium: towards direct bandgap Ge1−xSnx nanowires

Non-equilibrium induction of tin in germanium: towards direct bandgap Ge1−xSnx nanowires

Direct band gap nanostructures compatible with Si-based electronics are actively investigated. Here, Biswas et al. incorporate unusually large amounts of tin in germanium nanowires by non-equilibrium kinetic trapping, and optical characterizations suggest that the nanowires exhibit a direct band gap...

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Autores principales: Subhajit Biswas, Jessica Doherty, Dzianis Saladukha, Quentin Ramasse, Dipanwita Majumdar, Moneesh Upmanyu, Achintya Singha, Tomasz Ochalski, Michael A. Morris, Justin D. Holmes
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2016
Materias:
Science
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Acceso en línea:https://doaj.org/article/5e60bb3adf1b4912ad37a844fb038f4b
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