DC model for SiC MOSFETs using artificial neural network optimized by artificial bee colony algorithm
A DC model for silicon carbide (SiC) metal–oxide–semiconductor field effect transistors (MOSFETs) is proposed in this paper using a hybrid modeling method based on the artificial neural network and artificial bee colony (ABC) algorithm. A multi-layer perceptron neural network using the Levenberg–Mar...
Guardado en:
Autores principales: | , , , , |
---|---|
Formato: | article |
Lenguaje: | EN |
Publicado: |
AIP Publishing LLC
2021
|
Materias: | |
Acceso en línea: | https://doaj.org/article/5ecf265b3d00439ba3c0354692805523 |
Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|