DC model for SiC MOSFETs using artificial neural network optimized by artificial bee colony algorithm

A DC model for silicon carbide (SiC) metal–oxide–semiconductor field effect transistors (MOSFETs) is proposed in this paper using a hybrid modeling method based on the artificial neural network and artificial bee colony (ABC) algorithm. A multi-layer perceptron neural network using the Levenberg–Mar...

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Autores principales: Yuan Liu, Wanqin Zhang, Zeqi Zhu, Xiao Dong, Wanling Deng
Formato: article
Lenguaje:EN
Publicado: AIP Publishing LLC 2021
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Acceso en línea:https://doaj.org/article/5ecf265b3d00439ba3c0354692805523
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