DC model for SiC MOSFETs using artificial neural network optimized by artificial bee colony algorithm
A DC model for silicon carbide (SiC) metal–oxide–semiconductor field effect transistors (MOSFETs) is proposed in this paper using a hybrid modeling method based on the artificial neural network and artificial bee colony (ABC) algorithm. A multi-layer perceptron neural network using the Levenberg–Mar...
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| Autores principales: | , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
AIP Publishing LLC
2021
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/5ecf265b3d00439ba3c0354692805523 |
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| Sumario: | A DC model for silicon carbide (SiC) metal–oxide–semiconductor field effect transistors (MOSFETs) is proposed in this paper using a hybrid modeling method based on the artificial neural network and artificial bee colony (ABC) algorithm. A multi-layer perceptron neural network using the Levenberg–Marquardt (LM) method is applied to model SiC MOSFETs based on the data provided by the datasheet. The search strategy of artificial bees is improved based on the standard ABC, which enhances the search ability of the standard ABC. In view of the sensitivity of the LM method to the initial value, the improved ABC algorithm is adopted to help the neural network find initial weights and biases, which improves the accuracy of the modeling results. Comparing the modeling results with the I–V curves in the datasheet, the accuracy of the DC model is verified under different temperatures. In addition, the small signal parameters gm and gd that are not exposed in the training process also fit well with the datasheet, which fully demonstrates the feasibility of this hybrid modeling method. |
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